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PDF H7P0601DS Data sheet ( Hoja de datos )
| Número de pieza | H7P0601DS | |
| Descripción | Silicon P Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
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H7P0601DL, H7P0601DS
Silicon P Channel MOS FET
High Speed Power Switching
www.DataSheet4U.com Features
• Low on-resistance
RDS(on) = 40 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source
Outline
REJ03G0044-0100Z
Rev.1.00
Aug.05.2003
D
G
S
DPAK-2
4
DPAK-S
4
12 3
12 3
H7P0601DS
H7P0601DL
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Aug.05.2003, page 1 of 10
1 page  
H7P0601DL, H7P0601DS
www.DataSheet4U.com
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
−1
Pulse Test
−0.8
−0.6
−0.4
ID = −10 A
−5 A
−0.2
−2 A
0
0 −4 −8 −12 −16 −20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
VGS = −4.5 V
0.2
0.1
0.05
−10 V
0.02
0.01
−1
−2 −5 −10 −20 −50 −100
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Temperature
0.16
Pulse Test
0.12
0.08
ID = −10 A
VGS = −4.5 V
−2 A, −5 A
0.04
VGS = −10 V
ID = −10 A
−2 A, −5 A
0
−50 0
50 100
Case Temperature Tc (°C)
150
Forward Transfer Admittance vs.
Drain Current
100
VDS = −10 V
Pulse Test
30 Tc = −25°C
10
25°C
3
75°C
1
0.3
0.1
0.1
0.3 1 3 10 30
Drain Current ID (A)
100
Rev.1.00, Aug.05.2003, page 5 of 10
5 Page 
www.DataSheet4U.com
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts,
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© 2003. Renesas Technology Corp., All rights reserved. Printed in Japan.
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11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet H7P0601DS.PDF ] | |
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