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H7N1002LM PDF даташит

Спецификация H7N1002LM изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H7N1002LM
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

9 Pages
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H7N1002LM Даташит, Описание, Даташиты
H7N1002LD, H7N1002LS, H7N1002LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1131-0700
(Previous: ADE-208-1573E)
Rev.7.00
Apr 07, 2006
Features
Low on-resistance
www.DataSheet4U.cRoDmS (on) = 8 mtyp.
Low drive current
Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N1002LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N1002LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N1002LM
S
Rev.7.00 Apr 07, 2006 page 1 of 8









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H7N1002LM Даташит, Описание, Даташиты
H7N1002LD, H7N1002LS, H7N1002LM
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
www.DataSheetS4Uto.rcaogme temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Value
100
±20
75
300
75
50
166
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
100 —
±20 —
— — ±10
— — 10
1.0 — 2.5
— 8 10
— 10 15
57 95 —
— 9700 —
— 740 —
— 330 —
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±16 V, VDS = 0
µA VDS = 100 V, VGS = 0
V ID = 1 mA, VDS = 10 V Note 4
mID = 37.5 A, VGS = 10 V Note 4
mID = 37.5 A, VGS = 4.5 V Note 4
S ID = 37.5 A, VDS = 10 V Note 4
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
— 155 —
— 35 —
— 33 —
nC VDD = 50 V
nC VGS = 10 V
nC ID = 75 A
— 43 —
— 245 —
— 130 —
ns VGS = 10 V, ID = 37.5 A
ns RL = 0.8
ns Rg = 4.7
— 25 — ns
— 0.93 —
— 70 —
V IF = 75 A, VGS = 0
ns IF = 75 A, VGS = 0
diF/dt = 100 A/µs
Rev.7.00 Apr 07, 2006 page 2 of 8









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H7N1002LM Даташит, Описание, Даташиты
H7N1002LD, H7N1002LS, H7N1002LM
Main Characteristics
Power vs. Temperature Derating
200
150
100
www.DataSheet4U.com
50
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50 10 V
4V
40
3.6 V
Pulse Test
30
3.4 V
20
10
VGS = 3 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4 ID = 50 A
0.2 20 A
10 A
0
0 5 10 15 20
Gate to Source Voltage VGS (V)
Rev.7.00 Apr 07, 2006 page 3 of 8
Maximum Safe Operation Area
1000
300
100
1 ms 1001µ0sµs
30
10 DC Operation
3 (Tc = 25°C)
1 Operation in
PW = 10 ms
(1shot)
0.3 this area is
limited by RDS(on)
0.1
Ta = 25°C
0.03
0.1 0.3 1 3 10 30
100 300
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20 Tc = 75°C
25°C
10
–25°C
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
50
Pulse Test
20
VGS = 4.5 V
10
5 10 V
2
1
0.5
2
5 10 20 50 100 200
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
H7N1002LDSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N1002LMSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N1002LSSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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