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H7N1004DL PDF даташит

Спецификация H7N1004DL изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H7N1004DL
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H7N1004DL Даташит, Описание, Даташиты
H7N1004DL, H7N1004DS
Silicon N-Channel MOSFET
High-Speed Power Switching
Features
Low on-resistance
RDS(on) = 25 mtyp.
www.DataSheet4U.cLoomw drive current
Available for 4.5 V gate drive
Outline
REJ03G1482-0100
Rev.1.00
Nov 07, 2006
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-2)
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK-(S))
D
12 3
H7N0607DL
12 3
H7N0607DS
G
S
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Value
100
±20
25
75
75
15
22.5
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.1.00 Nov 07, 2006 page 1 of 8









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H7N1004DL Даташит, Описание, Даташиты
H7N1004DL, H7N1004DS
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
www.DataSheetO4Uu.tcpoumt capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
100
±20
1.5
20
Typ
25
30
35
2800
240
140
50
9
11
23
110
70
9.5
0.89
45
Max
±10
10
2.5
35
45
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 100 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 4
ID = 12.5 A, VGS = 10 V Note 4
ID = 12.5 A, VGS = 4.5 V Note 4
ID = 12.5 A, VGS = 10 V Note 4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 50 V
VGS = 10 V
ID = 25 A
VGS = 10 V, ID = 12.5 A
RL = 2.4
Rg = 4.7
IF = 25 A, VGS = 0
IF = 25 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00 Nov 07, 2006 page 2 of 8









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H7N1004DL Даташит, Описание, Даташиты
H7N1004DL, H7N1004DS
Main Characteristics
Power vs. Temperature Derating
40
30
20
www.DataSheet4U.com
10
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
6V
40
Pulse Test
4V
30
3.5 V
20
10
VGS = 3 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
ID = 20 A
0.4
10 A
0.2 5 A
0
0 5 10 15 20
Gate to Source Voltage VGS (V)
Rev.1.00 Nov 07, 2006 page 3 of 8
Maximum Safe Operation Area
1000
300
100
30
10
3
1
(TcDPC=W2O5=p°eC1r0)amtios1n(m1 sshot)10100µµss
0.3 Operation in
0.1
this area is
limited by RDS (on)
0.03
Ta = 25°C
0.01
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = –25°C
10 25°C
75°C
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
500
Pulse Test
200
100
50 VGS = 4.5 V
20 10 V
10
5
12
5 10 20 50 100
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
H7N1004DLSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N1004DSSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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