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H5N2003P PDF даташит

Спецификация H5N2003P изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H5N2003P
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H5N2003P Даташит, Описание, Даташиты
H5N2003P
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.comHigh speed switching
Outline
TO-3P
D
G
S
1
2
3
REJ03G0235-0100Z
Rev.1.00
Apr.09.2004
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
60
240
60
240
40
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
(Ta = 25°C)
Rev.1.00, Apr.09.2004, page 1 of 6









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H5N2003P Даташит, Описание, Даташиты
H5N2003P
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
www.DataSheet4UR.ceovmerse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Min
200
3.0
26
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Typ
44
0.032
Max
1
±0.1
4.0
0.042
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 30 A, VDS = 10 V Note4
ID = 30 A, VGS = 10 VNote4
5150
660
110
65
260
200
180
132
30
60
1.0
190
1.4
1.5
pF VDS = 25 V
pF VGS = 0
pF f = 1 MHz
ns ID = 30 A
ns VGS = 10 V
ns RL = 3.33
ns Rg = 10
nC VDD = 160 V
nC VGS = 10 V
nC ID = 60 A
V IF = 60 A, VGS = 0 Note4
ns IF = 60 A, VGS = 0
µC diF/dt = 100 A/µs
Rev.1.00, Apr.09.2004, page 2 of 6









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H5N2003P Даташит, Описание, Даташиты
H5N2003P
Main Characteristics
Power vs. Temperature Derating
200
150
100
www.DataSheet4U.com
50
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
8V
Pulse Test
7V
80
60 6 V
40
20
VGS = 5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
4
Pulse Test
3
2 ID = 60 A
30 A
1
10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
1000
300
100
10 µs
PW
30
10
= 10 ms (1shot)
3
Operation in
1 this area is
limited by RDS(on)
0.3
0.1 Ta = 25°C
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
200
VDS = 10 V
Pulse Test
160
120
80
40
Tc = 75°C
25°C
25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
VGS = 10 V, 15 V
0.05
0.02
0.01
0.005
0.002
0.001
1
Pulse Test
3 10 30 100 300 1000
Drain Current ID (A)
Rev.1.00, Apr.09.2004, page 3 of 6










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Номер в каталогеОписаниеПроизводители
H5N2003PSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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