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Número de pieza | H5N2505DL | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de H5N2505DL (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! H5N2505DL, H5N2505DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
www.DataSheet•4U.cHoimgh speed switching
• Low gate change
• Avalanche ratings
REJ03G1107-0300
Rev.3.00
Oct 16, 2006
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IDR (pulse) Note 1
IAP Note 3
Pch Note 2
θ ch-c
Tch
Tstg
Value
250
±30
5
20
5
20
5
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Rev.3.00 Oct 16, 2006 page 1 of 7
1 page H5N2505DL, H5N2505DS
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
www.DataSheet4U.com
4
VGS = 0 V
2 10 V
5V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
4 ID = 10 mA
1 mA
3
2 0.1 mA
1
0
−25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γs (t) • θch – c
θch – c = 5°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
V DD
= 125 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
Rev.3.00 Oct 16, 2006 page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet H5N2505DL.PDF ] |
Número de pieza | Descripción | Fabricantes |
H5N2505DL | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
H5N2505DS | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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