DataSheet.es    


PDF H5N2505DL Data sheet ( Hoja de datos )

Número de pieza H5N2505DL
Descripción Silicon N Channel MOS FET High Speed Power Switching
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



Hay una vista previa y un enlace de descarga de H5N2505DL (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! H5N2505DL Hoja de datos, Descripción, Manual

H5N2505DL, H5N2505DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low drive current
www.DataSheet4U.cHoimgh speed switching
Low gate change
Avalanche ratings
REJ03G1107-0300
Rev.3.00
Oct 16, 2006
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IDR (pulse) Note 1
IAP Note 3
Pch Note 2
θ ch-c
Tch
Tstg
Value
250
±30
5
20
5
20
5
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Rev.3.00 Oct 16, 2006 page 1 of 7

1 page




H5N2505DL pdf
H5N2505DL, H5N2505DS
Reverse Drain Current vs.
Source to Drain Voltage
10
8
6
www.DataSheet4U.com
4
VGS = 0 V
2 10 V
5V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
4 ID = 10 mA
1 mA
3
2 0.1 mA
1
0
25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.02
0.03
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c(t) = γs (t) • θch – c
θch – c = 5°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10
Vin
10 V
D.U.T.
Vout
Monitor
RL
V DD
= 125 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
Rev.3.00 Oct 16, 2006 page 5 of 7

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet H5N2505DL.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
H5N2505DLSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H5N2505DSSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar