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H5N2508DS PDF даташит

Спецификация H5N2508DS изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H5N2508DS
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H5N2508DS Даташит, Описание, Даташиты
H5N2508DL, H5N2508DS
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance: R DS (on) = 0.48 typ.
www.DataSheet4U.cLoomw leakage current: IDSS = 1 µA max (at VDS = 250 V)
High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)
Low gate charge: Qg = 13 nC typ (at VDD = 200 V, VGS = 10 V, ID = 7 A)
Avalanche ratings
REJ03G1108-0200
(Previous: ADE-208-1377)
Rev.2.00
Sep 07, 2005
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S) )
D
4
123
123
G
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7









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H5N2508DS Даташит, Описание, Даташиты
H5N2508DL, H5N2508DS
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
www.DataSheetC4Uh.acnonmel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Tch 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IDR (pulse) Note 1
IAP Note 3
Pch Note 2
θ ch-c
Tch
Tstg
Value
250
±30
7
28
7
28
7
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
Note: 4. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS
250
V ID = 10 mA, VGS = 0
IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
IDSS
——
1 µA VDS = 250 V, VGS = 0
VGS (off)
RDS (on)
|yfs|
3.0 — 4.5 V VDS = 10 V, ID = 1 mA
— 0.48 0.63 ID = 3.5 A, VGS = 10 V Note 4
3.0 5.0 — S ID = 3.5 A, VDS = 10 V Note 4
Ciss
— 450 — pF VDS = 25 V
Coss
— 60 — pF VGS = 0
Crss
— 12 — pF f = 1 MHz
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
— 19 — ns VDD = 125 V, ID = 3.5 A
— 14 — ns VGS = 10 V
— 47 — ns RL = 35.7
— 11 — ns Rg = 10
— 13 — nC VDD = 200 V
— 2.5 — nC VGS = 10 V
— 6 — nC ID = 7 A
VDF — 0.9 1.4 V IF = 7 A, VGS = 0
trr — 100 — ns IF = 7 A, VGS = 0
Qrr — 0.38 — µC diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7









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H5N2508DS Даташит, Описание, Даташиты
H5N2508DL, H5N2508DS
Main Characteristics
Power vs. Temperature Derating
40
30
20
www.DataSheet4U.com
10
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8
8V
6
Pulse Test
6V
5.5 V
4
2 5V
VGS = 4.5 V
0
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
6
4 ID = 7 A
2 3A
1A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
30
10
3
1
0.3
DC OperPaWtio=n1(10Tcmm=ss
Operation in
100
(1shot)
25°C)
10
µs
µs
0.1 this area is
limited by RDS(on)
0.03
Ta = 25°C
0.01
1 3 10 30 100 300
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
8
6
4
25°C
Tc = 75°C
2
–25°C
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5 VGS = 10 V
0.2
0.1
0.2
0.5 1 2
5 10 20
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
H5N2508DLSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H5N2508DSSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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