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H5N2512CF PDF даташит

Спецификация H5N2512CF изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H5N2512CF
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H5N2512CF Даташит, Описание, Даташиты
H5N2512CF
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.cHoimgh Speed Switching
Built-in fast recovery diode
Outline
TO-220CFM D
REJ03G0481-0100
Rev.1.00
Nov.26.2004
1. Gate
2. Drain
G 3. Source
1
S
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Tch 150°C
Symbol
VDSS
VGSS
ID
ID(pulse) Note 1
IDR
IDR(pulse) Note 1
IAP Note 3
Pch Note 2
θch-c
Tch
Tstg
Ratings
250
±30
18
72
18
72
18
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Rev.1.00, Nov.26.2004, page 1 of 3









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H5N2512CF Даташит, Описание, Даташиты
H5N2512CF
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
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Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Min
250
1.5
9
Typ
0.082
Max
±0.1
10
4.0
0.105
16
2200
300
85
32
60
160
60
81
10
38
0.9
110
1.4
0.39 —
Unit
V
µA
µA
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 250 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 9 A, VGS = 10 V Note 4
S ID = 9 A, VDS = 10 V Note 4
pF VDS = 25 V
pF VGS = 0
pF f = 1MHz
ns ID = 9 A
ns RL = 13.9
ns VGS = 10 V
ns Rg = 10
nC VDD = 200 V
nC VGS = 10 V
nC ID = 18 A
V IF = 18 A, VGS = 0 Note4
ns IF = 18 A, VGS = 0
diF/ dt = 100 A/µs
µC
Rev.1.00, Nov.26.2004, page 2 of 3









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H5N2512CF Даташит, Описание, Даташиты
H5N2512CF
Package Dimensions
10.0 ± 0.3 φ 3.2 ± 0.2
4.5 ± 0.3
2.7 ± 0.2
As of January, 2003
Unit: mm
www.DataSheet4U.com
1.0 ± 0.2
1.15 ± 0.2
0.6 ± 0.1
2.5 ± 0.2
2.54
2.54
0.7 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
TO-220CFM
1.9 g
Ordering Information
Part Name
Quantity
Shipping Container
H5N3007CF
50
Stick
Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is
applied.
Contact Renesas sales office for any question regarding recommended soldering condition of Renesas.
Rev.1.00, Nov.26.2004, page 3 of 3










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Номер в каталогеОписаниеПроизводители
H5N2512CFSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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