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H5N2513PL PDF даташит

Спецификация H5N2513PL изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H5N2513PL
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H5N2513PL Даташит, Описание, Даташиты
H5N2513PL
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
High speed switching
www.DataSheet4U.cBoumilt-in fast recovery diode
Outline
RENESAS Package code: PRSS0004ZF-A
(Package name: TO-3PL)
G
1
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain
peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAP Note3
EAR Note3
Pch Note2
θch-c
Tch
Tstg
REJ03G1243-0100
Rev.1.00
Jul 25, 2008
D
1. Gate
2. Drain (Flange)
3. Source
S
Ratings
250
±30
100
400
100
400
100
625
250
0.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1243-0100 Rev.1.00 Jul 25, 2008
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H5N2513PL Даташит, Описание, Даташиты
H5N2513PL
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
www.DataSheetR4Ue.vceormse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
250
2.0
39
Typ
65
0.020
Max
10
±0.1
4.0
0.026
9300
1200
280
90
420
550
400
330
45
175
1.2
210
1.8
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 50 A, VDS = 10 V Note4
ID = 50 A, VGS = 10 V Note4
pF VDS = 25 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 50 A, VGS = 10 V,
ns RL = 2.5 , Rg = 10
ns
ns
nC VDD = 200 V, VGS = 10 V
nC ID = 100 A
nC
V IF = 100 A, VGS = 0 Note4
ns IF = 100 A, VGS = 0
diF/dt = 100 A/µs
REJ03G1243-0100 Rev.1.00 Jul 25, 2008
Page 2 of 3









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H5N2513PL Даташит, Описание, Даташиты
H5N2513PL
Package Dimensions
Package Name
TO-3PL
JEITA Package Code
RENESAS Code
PRSS0004ZF-A
Previous Code
TO-3PL / TO-3PLV
MASS[Typ.]
9.9g
www.DataSheet4U.com
20.0 ± 0.3
φ3.3 ± 0.2
5.0 ± 0.2
5.45 ± 0.5
1.4
3.0
2.2
1.2
+0.25
–0.1
5.45 ± 0.5
0.6
+0.25
–0.1
1.0
2.8 ± 0.2
3.8
7.4
Unit: mm
Ordering Information
Part Name
H5N2513PL-E
Quantity
100 pcs.
Plastic case
Shipping Container
REJ03G1243-0100 Rev.1.00 Jul 25, 2008
Page 3 of 3










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Номер в каталогеОписаниеПроизводители
H5N2513PLSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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