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What is H5N2522LS?

This electronic component, produced by the manufacturer "Renesas Technology", performs the same function as "Silicon N Channel MOS FET High Speed Power Switching".


H5N2522LS Datasheet PDF - Renesas Technology

Part Number H5N2522LS
Description Silicon N Channel MOS FET High Speed Power Switching
Manufacturers Renesas Technology 
Logo Renesas Technology Logo 


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H5N2522LS
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.cHoimgh speed switching
Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03G1667-0100
Rev.1.00
Apr 23, 2008
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
250
±30
20
60
20
60
20
25
75
1.67
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1667-0100 Rev.1.00 Apr 23, 2008
Page 1 of 3


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H5N2522LS electronic component.


Information Total 4 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
H5N2522LSThe function is Silicon N Channel MOS FET High Speed Power Switching. Renesas TechnologyRenesas Technology

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