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H5N2803PF PDF даташит

Спецификация H5N2803PF изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H5N2803PF
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H5N2803PF Даташит, Описание, Даташиты
H5N2803PF
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.cHoimgh speed switching
Outline
TO-3PFM
D
REJ03G0395-0100
Rev.1.00
Aug.05.2004
G
S
1
23
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
280
±30
30
120
30
120
15
13.6
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.1.00, Aug.05.2004, page 1 of 6









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H5N2803PF Даташит, Описание, Даташиты
H5N2803PF
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
www.DataSheetR4Ue.vceormse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Body-Drain diode reverse recovery
charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Min
280
3.0
19
Typ
34
0.040
Max
1
±0.1
4.0
0.047
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 280 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 15 A, VDS = 10 V Note4
ID = 15 A, VGS = 10 VNote4
5150 — pF VDS = 25 V
640 — pF VGS = 0
45 — pF f = 1 MHz
60 — ns ID = 15 A
110 — ns VGS = 10 V
160 — ns RL = 9.3
100 — ns Rg = 10
100 — nC VDD = 220 V
26 — nC VGS = 10 V
38 — nC ID = 30 A
0.9 1.4 V IF = 30 A, VGS = 0 Note4
230 — ns IF = 30 A, VGS = 0
1.8 — µC diF/dt = 100 A/µs
Rev.1.00, Aug.05.2004, page 2 of 6









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H5N2803PF Даташит, Описание, Даташиты
H5N2803PF
Main Characteristics
Power vs. Temperature Derating
80
60
40
www.DataSheet4U.com
20
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
10 V
8V
Pulse Test
6.5 V
80
6V
60
5.5 V
40
20 VGS = 5 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
4
Pulse Test
3
ID = 50 A
2
30 A
1
15 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
1000
300
100
30
1
ms
100
10
µs
µs
10
Operation in
3 this area is
1 limited by RDS(on)
0.3
PW = 10 ms
(1shot)
0.1
0.03
Ta = 25°C
DC Operation
(Tc = 25°C)
0.01
1 3 10 30 100 300
1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.1
VGS = 10 V, 15 V
0.05
0.02
0.01
0.005
0.002
0.001
1
Pulse Test
3 10 30 100 300 1000
Drain Current ID (A)
Rev.1.00, Aug.05.2004, page 3 of 6










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Номер в каталогеОписаниеПроизводители
H5N2803PFSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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