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H5N5016PL PDF даташит

Спецификация H5N5016PL изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H5N5016PL
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H5N5016PL Даташит, Описание, Даташиты
H5N5016PL
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.cHoimgh speed switching
Built-in fast recovery diode
Outline
TO-3PL
D
REJ03G0175-0200Z
Rev.2.00
Jul.02.2004
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case Thermal Impedance
Channel temperature
Storage temperature
Notes 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
PchNote 2
θch-c
Tch
Tstg
Ratings
500
±30
50
200
50
200
10
5.5
250
0.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C /W
°C
°C
Rev.2.00, Jul.02.2004, page 1 of 6









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H5N5016PL Даташит, Описание, Даташиты
H5N5016PL
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
www.DataSheetT4uUr.nco-omn delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body–drain diode forward voltage
Body–drain diode reverse recovery time
Body–drain diode reverse recovery charge
Notes: 4. Pulse test
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Min
500
1.5
23
Typ
38
0.108
5300
720
37
60
190
250
240
130
25
50
1.05
230
1.5
Max
10
±0.1
4.0
0.128
1.6
Unit
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VDS = 500 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 25 A, VDS = 10 V Note4
ID = 25 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID= 25 A
VGS = 10 V
RL = 10
Rg = 10
VDD = 400 V
VGS = 10 V
ID = 50 A
IF = 50 A, VGS = 0 V Note4
IF = 50 A, VGS = 0
diF/dt = 100 A/µs
Rev.2.00, Jul.02.2004, page 2 of 6









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H5N5016PL Даташит, Описание, Даташиты
H5N5016PL
Main Characteristics
Power vs. Temperature Derating
400
300
200
www.DataSheet4U.com
100
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
Pulse Test
10 V
8V
80 6 V
5.5 V
60
40 5 V
20
4.5 V
VGS = 4 V
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
6 I D = 50 A
4
25 A
2
10 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
1000
300
100
30
1 ms 100 µs 10 µs
10
3 DC Operation
1 (Tc = 25°C)
0.3
Operation in
this area is
0.1 limited by RDS(on)
0.03
Ta = 25°C
0.01
1 3 10
PW = 10 ms
(1shot)
30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
V DS = 10 V
Pulse Test
80
60
40
20
Tc = 75°C
25°C
-25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.05
0.02
Pulse Test
VGS = 10 V, 15 V
0.01
12
5 10
Drain Current
20 50
ID (A)
100
Rev.2.00, Jul.02.2004, page 3 of 6










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Номер в каталогеОписаниеПроизводители
H5N5016PLSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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