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H7N0311LS PDF даташит

Спецификация H7N0311LS изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H7N0311LS
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H7N0311LS Даташит, Описание, Даташиты
H7N0311LD, H7N0311LS, H7N0311LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1126-0500
(Previous: ADE-208-1423C)
Rev.5.00
Apr 07, 2006
Features
Low on-resistance
www.DataSheet4U.cRoDmS (on) = 7.0 mtyp.
Low drive current
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0311LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N0311LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0311LM
S
Rev.5.00 Apr 07, 2006 page 1 of 7









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H7N0311LS Даташит, Описание, Даташиты
H7N0311LD, H7N0311LS, H7N0311LM
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
www.DataSheetN4Uot.ceosm: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
θ ch-c
Tch
Tstg
Value
30
±20
45
180
45
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
30 — —
±20 —
— — ±10
— — 10
1.0 — 2.5
— 7.0 8.8
— 11 16
27 45 —
— 1650 —
— 440 —
— 250 —
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±16 V, VDS = 0
µA VDS = 30 V, VGS = 0
V ID = 1 mA, VDS = 10 V Note 3
mID = 22.5 A, VGS = 10 V Note 3
mID = 22.5 A, VGS = 5 V Note 3
S ID = 22.5 A, VDS = 10 V Note 3
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
— 28 — nC VDD = 10 V
— 6.0 — nC VGS = 10 V
— 5.4 — nC ID = 45 A
— 22 —
— 310 —
— 50 —
ns VGS = 10 V, ID = 22.5 A
ns RL = 0.44
ns Rg = 4.7
— 16 — ns
— 0.93 —
— 40 —
V IF = 45 A, VGS = 0
ns IF = 45 A, VGS = 0
diF/dt = 50 A/µs
Rev.5.00 Apr 07, 2006 page 2 of 7









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H7N0311LS Даташит, Описание, Даташиты
H7N0311LD, H7N0311LS, H7N0311LM
Main Characteristics
Power vs. Temperature Derating
80
60
40
www.DataSheet4U.com
20
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
6V
40
4V
Pulse Test
30 3.5 V
20
VGS = 3 V
10
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4 ID = 50 A
0.2 20 A
10 A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.5.00 Apr 07, 2006 page 3 of 7
Maximum Safe Operation Area
500
10 µs
100
10
1
1 ms
DC OperatioPnW = 10
Operation in
100
ms
µs
this area is
limited by RDS (on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10
25°C
–25°C
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20 VGS = 5 V
10
5 10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
H7N0311LDSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N0311LMSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N0311LSSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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