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H7N0405LS PDF даташит

Спецификация H7N0405LS изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H7N0405LS
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

8 Pages
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H7N0405LS Даташит, Описание, Даташиты
H7N0405LD, H7N0405LS, H7N0405LM
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 4.0 mtyp.
www.DataSheet4U.cLoomw drive current.
Capable of 4.5 V gate drive
REJ03G1367-0100
Rev.1.00
Sep 25, 2006
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0405LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N0405LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0405LM
S
Rev.1.00 Sep 25, 2006 page 1 of 7









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H7N0405LS Даташит, Описание, Даташиты
H7N0405LD, H7N0405LS, H7N0405LM
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
www.DataSheetS4Uto.rcaogme temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
3. Tch = 25°C, Rg 50
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAPNote3
EARNote3
PchNote2
Tch
Tstg
Item
Drain to source break down voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cut off voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer admittance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-off delay time
Rise time
Body-drain diode forward voltage
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
40
±20
1.5
54
Typ
4.0
6.2
90
5600
825
550
100
25
25
40
400
100
26
0.94
40
Rating
40
±20
80
320
80
40
213
80
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Max
±10
10
2.5
5.0
8.7
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 40 V, VGS = 0
ID = 1 mA, VDS = 10 VNote4
ID = 40 A, VGS = 10 VNote4
ID = 40 A, VGS = 4.5 VNote4
ID = 40 A, VGS = 10 VNote4
VDS = 10 V, VGS = 0,
f = 1 MHz
VDD = 25 V, VGS = 10 V,
ID = 80 A
VGS = 10 V, ID = 40 A,
RL = 0.75 , Rg = 4.7
IF = 80 A, VGS = 0
IF = 80 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00 Sep 25, 2006 page 2 of 7









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H7N0405LS Даташит, Описание, Даташиты
H7N0405LD, H7N0405LS, H7N0405LM
Main Characteristics
Power vs. Temperature Derating
160
120
80
www.DataSheet4U.com
40
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
100
4.4 V
6V
80 10 V
60
4.0 V
40
VGS = 3.6 V
20
Pulse Test
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
30
10
VGS = 4.5 V
3 10 V
1
1 3 10 30 100
Drain Current ID (A)
Rev.1.00 Sep 25, 2006 page 3 of 7
Maximum Safe Operation Area
1000
300
100
100
10
µs
µs
30
10 DC Operation
(Tc = 25°C)
3
1 Operation in
this area is
0.3 limited by RDS(on)
0.1
0.03
Ta = 25°C
0.01
0.1 0.3 1
3
PW = 10 ms
(1 shot)
10 30
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
VDS = 10 V
Pulse Test
80
60
40
20 –40°C
25°C
Tc = 150°C
0 123
45
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
15
Pulse Test
10 10, 20, 50 A
4.5 V
5
VGS = 10 V
10, 20, 50 A
0
–50 0
50 100 150
Case Temperature Tc (°C)










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Номер в каталогеОписаниеПроизводители
H7N0405LDSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N0405LMSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N0405LSSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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