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H7N0603DL PDF даташит

Спецификация H7N0603DL изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H7N0603DL
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

9 Pages
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H7N0603DL Даташит, Описание, Даташиты
H7N0603DL, H7N0603DS
Silicon N Channel MOS FET
High speed power Switching
Features
Low on - resistance
RDS (on) = 11 mtyp.
www.DataSheet4U.cLoomw drive current
Capable of 4.5 gate drive
Outline
REJ03G0123-0200
Rev.2.00
Jan.26.2005
PRSS0004ZD-B
PRSS0004ZD-C
(Previous code: DPAK(L)-2) (Previous code: DPAK-(S))
D4
4
1. Gate
2. Drain
3. Source
G
12 3
4. Drain
H7N0603DS
S 12 3
H7N0603DL
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Tc = 25°C
3. Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAPNote3
EARNote3
PchNote2
Tch
Tstg
Ratings
60
±20
30
120
30
25
53.6
40
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Jan.26.2005, page 1 of 8









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H7N0603DL Даташит, Описание, Даташиты
H7N0603DL, H7N0603DS
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer capacitance
Input capacitance
www.DataSheetO4Uu.tcpoumt capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
fall time
Body - drain diode forward voltage
Body – drain diode reverse recovery
time
Notes: 1. Pulse Test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
60
±20
1.5
24
Typ
11
16
40
3200
385
225
56
11
12
30
125
90
17
0.9
30
Max
±10
10
2.5
15
22
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test condition
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS = 10 VNote1
ID = 15 A, VGS = 4.5 VNote1
ID = 15 A, VDS = 10 VNote1
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 30 A
VGS = 10 V, ID = 15 A
RL = 2.0
Rg = 4.7
IF = 30 A, VGS = 0Note1
IF = 30 A, VGS = 0
diF / dt = 100 A / µs
Rev.2.00, Jan.26.2005, page 2 of 8









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H7N0603DL Даташит, Описание, Даташиты
H7N0603DL, H7N0603DS
Main Characteristics
Power vs. Tmperature Derating
50
40
30
20
www.DataSheet4U.com 10
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characterristics
50
VGS = 10 V
Pulse Test
5.0 V
40
4.5 V
4.0 V
30
3.5 V
20
10
3V
2.5 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
500
Pulse Test
400
300
ID = 20 A
200
10 A
100
5A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
1000
Maximum Safe Operation Area
300
100
30
10 DC Operation
(Tc = 25°C)
3
1001µ0sµs
1 PW = 10 ms
(1 shot)
0.3 Operation in
0.1 this area is
limited by RDS(on)
0.03
0.01 Ta = 25°C
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Typical Trasfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
150°C
10
25°C
Tc=–40°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source State Resistance
vs. Drain Current
100
Pulse Test
30
VGS = 4.5 V
10
10 V
3
1
1
3
10 30
100
Drain Current ID (A)
Rev.2.00, Jan.26.2005, page 3 of 8










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Номер в каталогеОписаниеПроизводители
H7N0603DLSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N0603DSSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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