H7N0608AB PDF даташит
Спецификация H7N0608AB изготовлена «Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching». |
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Детали детали
Номер произв | H7N0608AB |
Описание | Silicon N Channel MOS FET High Speed Power Switching |
Производители | Renesas Technology |
логотип |
10 Pages
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H7N0608AB
Silicon N Channel MOS FET
High Speed Power Switching
www.DataSheet4U.com Features
• Low on-resistance
RDS(on) = 6.0 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
TO-220AB
REJ03G0143-0100Z
Rev.1.00
Oct.30.2003
D
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
Rev.1.00, Oct.30.2003, page 1 of 9
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H7N0608AB
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
www.DataSheet4U.com Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAPNote3
EARNote3
PchNote2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
60
±20
70
280
70
40
137
80
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.1.00, Oct.30.2003, page 2 of 9
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H7N0608AB
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 60
Gate to source breakdown Voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
www.DataSheet4U.com Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage
VGS(off) 1.5
Static drain to source on state
RDS(on) —
resistance
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
45
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body–drain diode forward voltage VDF
Body–drain diode reverse
recovery time
trr
—
—
—
—
—
—
Notes: 1. Pulse test
Typ Max Unit Test Conditions
——V
ID = 10 mA, VGS = 0
——V
IG = ±100 µA, VDS = 0
—
±10 µA
VGS = ±16 V, VDS = 0
— 10 µA VDS = 60 V, VGS = 0
— 2.5 V
ID = 1 mA, VDS = 10 VNote1
6.0 8.0 mΩ ID = 35 A, VGS = 10 VNote1
8.0 12
mΩ ID = 35 A, VGS = 4.5 VNote1
75 — S
ID = 35 A, VGS = 10 VNote1
6200 — pF VDS = 10 V
680 — pF VGS = 0
350 — pF f = 1 MHz
100 —
nC VDD = 25 V
20 — nC VGS = 10 V
20 — nC ID = 70 A
45 — ns VGS = 10 V, ID = 35 A
220 — ns RL = 0.86 Ω
125 — ns Rg = 4.7 Ω
35 — ns
0.94 —
V
IF = 70 A, VGS = 0
40 — ns IF = 70 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00, Oct.30.2003, page 3 of 9
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Номер в каталоге | Описание | Производители |
H7N0608AB | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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