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H7N0608LM PDF даташит

Спецификация H7N0608LM изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel MOS FET High Speed Power Switching».

Детали детали

Номер произв H7N0608LM
Описание Silicon N Channel MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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H7N0608LM Даташит, Описание, Даташиты
www.DataSheet4U.com
H7N0608LD, H7N0608LS, H7N0608LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0144-0100Z
Rev.1.00
Oct.30.2003
Features
Low on-resistance
RDS(on) = 6.0 mtyp.
Low drive current
Available for 4.5 V gate drive
Outline
LDPAK
D
G
S
4 44
1
2
3
1
2
3
1
2
H7N0608LS H7N0608LM
3
H7N0608LD
1. Gate
2. Drain
3. Source
4. Drain
Rev.1.00, Oct.30.2003, page 1 of 11









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H7N0608LM Даташит, Описание, Даташиты
H7N0608LD, H7N0608LS, H7N0608LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID (pulse)Note1
IDR
IAPNote3
EARNote3
PchNote2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Ratings
60
±20
70
280
70
40
137
80
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.1.00, Oct.30.2003, page 2 of 11









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H7N0608LM Даташит, Описание, Даташиты
H7N0608LD, H7N0608LS, H7N0608LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 60
Gate to source breakdown Voltage V(BR)GSS ±20
Gate to source leak current
IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off) 1.5
Static drain to source on state
RDS(on)
resistance
Forward transfer admittance
Input capacitance
|yfs|
Ciss
45
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Body–drain diode forward voltage VDF
Body–drain diode reverse
recovery time
trr
Notes: 1. Pulse test
Typ Max Unit Test Conditions
——V
ID = 10 mA, VGS = 0
——V
IG = ±100 µA, VDS = 0
±10 µA
VGS = ±16 V, VDS = 0
— 10 µA VDS = 60 V, VGS = 0
— 2.5 V
ID = 1 mA, VDS = 10 VNote1
6.0 8.0 mID = 35 A, VGS = 10 VNote1
8.0 12
mID = 35 A, VGS = 4.5 VNote1
75 — S
ID = 35 A, VGS = 10 VNote1
6200 — pF VDS = 10 V
680 — pF VGS = 0
350 — pF f = 1 MHz
100 —
nC VDD = 25 V
20 — nC VGS = 10 V
20 — nC ID = 70 A
45 — ns VGS = 10 V, ID = 35 A
220 — ns RL = 0.86
125 — ns Rg = 4.7
35 — ns
0.94 —
V
IF = 70 A, VGS = 0
40 — ns IF = 70 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00, Oct.30.2003, page 3 of 11










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Номер в каталогеОписаниеПроизводители
H7N0608LSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N0608LDSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N0608LMSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
H7N0608LSSilicon N Channel MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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