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PDF HAT1041T Data sheet ( Hoja de datos )

Número de pieza HAT1041T
Descripción Silicon P Channel Power MOS FET High Speed Power Switching
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! HAT1041T Hoja de datos, Descripción, Manual

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
www.DataSheAet4cUc.coormdingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

1 page




HAT1041T pdf
Main Characteristics
Typical Output Characteristics
-20
-2V Pulse Test
-16 -10 V
-4 V
-12 -3 V
-8
-4
www.DataSheet4U.com
VGS = -1.5 V
0 -2 -4 -6 -8 -10
Drain to Source Voltage V DS (V)
HAT1041T
Typical Transfer Characteristics
-20
V DS = -10 V
-16 Pulse Test
-12
-8
Tc = -25°C
-4 25°C
75°C
0 -1 -2 -3 -4 -5
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
0.1
0.05 -2.5 V
0.02
0.01
0.005
VGS = -4.5 V
0.002
-0.2
-0.5 -1 -2
-5 -10 -20
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.1
Pulse Test
0.08
0.06
0.04 -2.5 V
I D = -5 A
-2 A, -1 A
0.02
0
-40
VGS = -4.5 V
-5 A
-2 A, -1 A
0 40 80 120 160
Case Temperature Tc (°C)

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