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HAT1055RJ PDF даташит

Спецификация HAT1055RJ изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon P Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT1055RJ
Описание Silicon P Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT1055RJ Даташит, Описание, Даташиты
HAT1055R, HAT1055RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
www.DataSheet4U.com Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
REJ03G0067-0100Z
Rev.1.00
Aug.29.2003
SOP-8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Rev.1.00, Aug.29.2003, page 1 of 9









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HAT1055RJ Даташит, Описание, Даташиты
HAT1055R, HAT1055RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
HAT1055R
HAT1055RJ
Drain to source voltage
Gate to source voltage
Drain current
www.DataSheet4U.com Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
VDSS
VGSS
ID
ID (pulse)Note1
IAPNote4
EARNote4
PchNote2
PchNote3
–60
±20
–5
–40
2
3
–60 V
±20 V
–5 A
–40 A
–5 A
2.14 mJ
2W
3W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1. PW 10µs, duty cycle 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
4. Value at Tch = 25°C, Rg 50
Rev.1.00, Aug.29.2003, page 2 of 9









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HAT1055RJ Даташит, Описание, Даташиты
HAT1055R, HAT1055RJ
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS –60
Gate to Source breakdown voltage V(BR)GSS ±20
Zero gate voltage drain current IDSS
www.DataSheet4U.com Zero gate voltage HAT1055R IDSS
drain current
HAT1055RJ IDSS
Gate to source leak current
IGSS
Gate to source cutoff voltage
VGS(off) –1.0
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
|yfs|
RDS(on)
RDS(on)
Ciss
3
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
td(on) —
Rise time
tr —
Turn-off delay time
td(off) —
Fall time
tf —
Body-drain diode forward voltage VDF
Body-drain diode reverse recovery trr
time
Notes: 5. Pulse test
Typ Max Unit
——V
5
60
90
1350
135
85
21
3
4
20
15
55
10
–0.85
25
–1
–10
±10
–2.5
76
130
–1.10
V
µA
µA
µA
µA
V
S
m
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = –60 V, VGS = 0
VDS = –48 V, VGS = 0
Ta = 125°C
VGS = ±16 V, VDS = 0
VDS = –10 V, ID = –1 mA
ID = –2.5 ANote5, VDS = –10 V
ID = –2.5 ANote5, VGS = –10 V
ID = –2.5 ANote5, VGS = –4.5 V
VDS = –10 V, VGS = 0
f = 1 MHz
VDD = –25 V
VGS = –10 V
ID = –5 A
VGS = –10 V, ID= –2.5 A
VDD –30 V
RL = 12
RG = 4.7
IF = –5 A, VGS = 0Note5
IF = –5 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00, Aug.29.2003, page 3 of 9










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Номер в каталогеОписаниеПроизводители
HAT1055RSilicon P Channel Power MOS FET Power SwitchingRenesas Technology
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