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Número de pieza | HAT1095C | |
Descripción | Silicon P Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT1095C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! HAT1095C
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 108 mΩ typ. (at VGS = –4.5 V)
www.DataSheet•4U.cLoomw drive current.
• 1.8 V gate drive devices.
• High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband 5 4
6
3
2
1
REJ03G1232-0500
Rev.5.00
Jan 26, 2006
2 34 5
D DD D
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
Gate to Source voltage
VDSS
VGSS
–12
±8
Drain current
Drain peak current
ID
ID (pulse)Note1
–2
–8
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
–2
830
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.5.00 Jan 26, 2006 page 1 of 6
1 page HAT1095C
Switching Time Test Circuit
Vin Monitor
4.7 Ω
Vin
–4.5 V
D.U.T.
Vout
Monitor
RL
VDD
= –10 V
www.DataSheet4U.com
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.5.00 Jan 26, 2006 page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HAT1095C.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT1095C | Silicon P Channel Power MOS FET Power Switching | Renesas Technology |
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