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Número de pieza | HAT1111C | |
Descripción | Silicon P Channel Power MOS FET Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAT1111C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! HAT1111C
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 245 mΩ typ. (at VGS = –10 V)
www.DataSheet•4U.cLoomw drive current.
• 4.5 V gate drive devices.
• High density mounting
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
234 5
DDD D
Index
band
5
4
6
3
2
1
6
G
S
1
REJ03G0446-0600
Rev.6.00
May 19.2005
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to Source voltage
VDSS
–60
Gate to Source voltage
VGSS
–20 / +10
Drain current
Drain peak current
ID
ID (pulse)Note1
–2
–8
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
–2
1.25
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6mm), PW ≤ 5 s, Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.6.00 May 19, 2005 page 1 of 6
1 page HAT1111C
Switching Time Test Circuit
Vin Monitor
4.7 Ω
Vin
-4.5 V
D.U.T.
Vout
Monitor
RL
VDD
= -10 V
www.DataSheet4U.com
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.6.00 May 19, 2005 page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HAT1111C.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAT1111C | Silicon P Channel Power MOS FET Power Switching | Renesas Technology |
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