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PDF HAT1126R Data sheet ( Hoja de datos )
| Número de pieza | HAT1126R | |
| Descripción | Silicon P Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
www.DataSheet•4U.cHoimgh density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
78
DD
56
DD
24
GG
S1
MOS1
S3
MOS2
8 7 65
1 234
REJ03G0406-0100
Rev.1.00
Sep.10.2004
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
HAT1126R
HAT1126RJ
Drain to source voltage
Gate to source voltage
VDSS
VGSS
–60
±20
–60
±20
Drain current
Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
ID
ID (pulse)Note1
IAPNote4
EARNote4
PchNote2
PchNote3
–6.0
–48
—
—
2
3
–6.0
–48
–6.0
3.08
2
3
Channel temperature
Tch 150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
W
°C
°C
Rev.1.00 Sep. 10, 2004 page 1 of 7
1 page  
HAT1126R, HAT1126RJ
Reverse Drain Current vs.
Source to Drain Voltage
–10
–10 V
Pulse Test
–8
–6 –5 V
–4
VGS = 0, 5 V
–2
www.DataSheet4U.com
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
10 Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
D=1
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01
0.001
1shot pulse
0.0001
10 µ
100 µ
1m
θch – f(t) = γs (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
10 Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D=1
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01
0.01
0.001
1shot pulse
0.0001
10 µ
100 µ
1m
θch – f(t) = γs (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10 100 1000 10000
Pulse Width PW (S)
Rev.1.00 Sep. 10, 2004, page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HAT1126R.PDF ] | |
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