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PDF HAT1127H Data sheet ( Hoja de datos )
| Número de pieza | HAT1127H | |
| Descripción | Silicon P Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAT1127H (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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HAT1127H
Silicon P Channel Power MOS FET
Power Switching
Features
• Capable of –4.5 V gate drive
• Low drive current
www.DataSheet•4U.cHoimgh density mounting
• Ultra Low on-resistance
RDS(on) = 3.6 mΩ typ. (at VGS = –10 V)
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
5
D
SSS
123
REJ03G1330-0500
Rev.5.00
Jan 20, 2006
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to Case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID(pulse)Note1
IDR
Pch Note2
θch-c Note2
Tch
Tstg
Ratings
–30
–20/+10
–40
–160
–40
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
Rev.5.00 Jan 20, 2006 page 1 of 6
1 page  
HAT1127H
www.DataSheet4U.com
Reverse Drain Current vs.
Source to Drain Voltage
–50
–40
–10 V
–5 V
–30
VGS = 0
–20
–10
Pulse Test
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
θch - f(t) = γs (t) x θch - f
θch - f = 4.17°C/W, Tc = 25°C
0.05
0.03
0.01
0.02
0.011shot
pulse
PDM
D=
PW
T
PW
T
10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
–10 V
VDD
= –10 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
Rev.5.00 Jan 20, 2006 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HAT1127H.PDF ] | |
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