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HAT2088R PDF даташит

Спецификация HAT2088R изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2088R
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

7 Pages
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HAT2088R Даташит, Описание, Даташиты
HAT2088R
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
www.DataSheet4U.cLoomw leakage current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
87 65
1234
4
G
5678
DDDD
SSS
123
REJ03G1183-0200
(Previous: ADE-208-1234)
Rev.2.00
Sep 07, 2005
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Rev.2.00 Sep 07, 2005 page 1 of 6









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HAT2088R Даташит, Описание, Даташиты
HAT2088R
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
VDSS
VGSS
200
±30
Drain current
Drain peak current
ID
ID (pulse) Note 1
2
16
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch Note 2
2
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
www.DataSheet4U.com 2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 3. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS
200
V ID = 10 mA, VGS = 0
IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
IDSS — — 1 µA VDS = 200 V, VGS = 0
VGS (off)
RDS (on)
|yfs|
3.0 — 4.5
— 0.35 0.44
1.5 2.5 —
V VDS = 10 V, ID = 1 mA
ID = 1 A, VGS = 10 V Note 3
S ID = 1 A, VDS = 10 V Note 3
Ciss
— 450 —
pF VDS = 25 V, VGS = 0
Coss
— 65 — pF f = 1 MHz
Crss
— 13 — pF
Qg — 13 — nC VDD = 160 V
Qgs — 2 — nC VGS = 10 V
Qgd — 6 — nC ID = 2 A
td (on)
tr
td (off)
tf
VDF
trr
— 19 — ns VGS = 10 V, ID = 1 A
— 8.5 —
ns VDD 100 V
— 48 — ns RL = 100
— 11 — ns Rg = 10
— 0.8 1.2 V IF = 2 A, VGS = 0 Note 3
— 65 — ns IF = 2 A, VGS = 0
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6









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HAT2088R Даташит, Описание, Даташиты
HAT2088R
Main Characteristics
Power vs. Temperature Derating
4
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW 10 s
3
2
www.DataSheet4U.com
1
0
0 50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
10
10 V
8V
8
6
6.5 V
Pulse Test
6V
4
5.5 V
2
VGS = 5 V
0
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
6
4 ID = 8 A
2 5A
2A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
100
10 µs
10
1
0.1
0.01
PW
DC
Operation
Oinperation
this area is
limited by RDS (on)
= 10
(PW
100
1 ms
ms
1N0oste)4
µs
Ta = 25°C
1 shot Pulse
0.001
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Note 4:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
8
6
4
Tc = 75°C
2
25°C
–25°C
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
VGS = 10 V, 15 V
2
1
0.5
0.2
0.1
0.1 0.2 0.5 1 2 5 10 20
Drain Current ID (A)
50










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Номер в каталогеОписаниеПроизводители
HAT2088RSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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