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HAT2090R PDF даташит

Спецификация HAT2090R изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2090R
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2090R Даташит, Описание, Даташиты
HAT2090R
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
www.DataSheet4U.cLoomw drive current
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
4
G
5678
DDDD
SSS
123
REJ03G1316-0100
(Previous: ADE-208-1474)
Rev.1.00
Nov 08, 2005
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
350
Gate to source voltage
VGSS
±30
Drain current
Drain peak current
ID
ID
Note1
(pulse)
0.9
7.2
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
0.9
2.5
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.1.00 Nov 08, 2005 page 1 of 3









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HAT2090R Даташит, Описание, Даташиты
HAT2090R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
V(BR)DSS
350
— V ID = 10 mA, VGS = 0
IDSS
1 µA VDS = 350 V, VGS = 0
IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0
VGS(off)
3.0
4.5 V VDS = 10 V, ID = 1 mA
|yfs| 0.7 1.2 — S ID = 0.45 A, VDS = 10 V Note3
RDS(on)
2.5
3.0 ID = 0.45 A, VGS = 10 V Note3
Input capacitance
Ciss — 365 — pF VDS = 25 V
Output capacitance
Coss
35
— pF VGS = 0
Reverse transfer capacitance
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Turn-on delay time
Crss
8
— pF f = 1 MHz
td(on)
20
— ns ID = 0.45 A
Rise time
Turn-off delay time
Fall time
tr — 10 — ns VGS = 10 V
td(off)
50
— ns RL = 556
tf — 50 — ns Rg = 10
Total gate charge
Qg — 12 — nC VDD = 250 V
Gate to source charge
Qgs — 2 — nC VGS = 10 V
Gate to drain charge
Qgd — 6 — nC ID = 0.9 A
Body-drain diode forward voltage
VDF — 0.8 1.2 V IF = 0.9 A, VGS = 0 Note3
Body-drain diode reverse recovery time
trr
— 210 — ns IF = 0.9 A, VGS = 0
diF/dt = 100 A/µs
Notes: 3. Pulse test
Rev.1.00 Nov 08, 2005 page 2 of 3









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HAT2090R Даташит, Описание, Даташиты
HAT2090R
Package Dimensions
Package Name
SOP-8
JEITA Package Code
P-SOP8-3.95 × 4.9-1.27
RENESAS Code
PRSP0008DD-D
Previous Code
FP-8DAV
MASS[Typ.]
0.085g
*1 D
8
5
bp
Index mark
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1
Z
4
*3 bp
e
xM
y
Terminal cross section
(Ni/Pd/Au plating)
L1
L
Detail F
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters
Symbol Min Nom Max
D 4.90 5.3
E 3.95
A2
A1 0.10 0.14 0.25
A 1.75
bp 0.34 0.40 0.46
b1
c 0.15 0.20 0.25
c1
0° 8°
HE 5.80 6.10 6.20
e 1.27
x 0.25
y 0.1
Z 0.75
L 0.40 0.60 1.27
L1 1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT2090R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.1.00 Nov 08, 2005 page 3 of 3










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Номер в каталогеОписаниеПроизводители
HAT2090RSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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