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HAT2092R PDF даташит

Спецификация HAT2092R изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2092R
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

8 Pages
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HAT2092R Даташит, Описание, Даташиты
HAT2092R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
www.DataSheet4U.cCoampable of 4.5 V gate drive
Low drive current
High density mounting
Outline
SOP-8
8 7 65
1 234
78
DD
24
GG
S1
MOS1
56
DD
S3
MOS2
REJ03G0511-0300
(Previous ADE-208-1236A(Z))
Rev.3.00
Jan.13.2005
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
Drain peak current
ID
ID(pulse)Note1
11
88
Body–drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch Note3
11
2
3
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1 %
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jan. 13, 2005 page 1 of 7









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HAT2092R Даташит, Описание, Даташиты
HAT2092R
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
www.DataSheetO4Uu.tcpoumt capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Note: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
±20
1.0
12
Typ
13
17
20
1400
340
190
22
4
4
15
17
50
9
0.85
50
Max
±10
1
2.5
16
25
1.10
Unit
V
V
µA
µA
V
m
m
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 5.5 A, VGS = 10 V Note4
ID = 5.5 A, VGS = 4.5 V Note4
ID = 5.5 A, VDS = 10 V Note4
VDS = 10V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 10 V
ID = 11 A
VGS = 10 A, ID = 5.5 A
VDD 10 V
RL = 1.83
Rg = 4.7
IF = 11A, VGS = 0 Note4
IF = 11A, VGS = 0
diF/ dt =50A/µs
Rev.3.00 Jan. 13, 2005 page 2 of 7









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HAT2092R Даташит, Описание, Даташиты
HAT2092R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
www.DataSheet4U.com
2.0
1.0 1 Drive Operation
0 50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
50
10 V
4.5 V
4V
40 Pulse Test
30 3.5 V
20
VGS = 3 V
10
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
0.08
0.04
ID = 10 A
5A
2A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
500
100 10 µs
10
1
DC OperPatWion=(P1W01
Operation in
this area is
100 µs
ms
ms
< 1N0otse) 4
0.1 limited by RDS(on)
Ta = 25°C
0.01 1 shot Pulse
0.1 0.3 1 3 10 30 100
Drain to Source Voltage VDS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
20
Tc = 75°C
25°C
-25°C
10
0 1 23 45
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20 VGS= 4.5 V
10 10 V
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.3.00 Jan. 13, 2005 page 3 of 7










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Номер в каталогеОписаниеПроизводители
HAT2092RSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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