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PDF HAT2126RP Data sheet ( Hoja de datos )
| Número de pieza | HAT2126RP | |
| Descripción | Silicon N Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAT2126RP (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
www.DataSheAet4cUc.coormdingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
Electrical Characteristics
(Ta = 25°C)
HAT2126RP
• MOS1
Item
Symbol Min
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
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Forward transfer admittance
Input capacitance
V(BR)DSS
V
(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
R
DS(on)
|yfs|
Ciss
30
±20
—
—
1.0
—
—
12
—
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Total gate charge
Qg —
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
td(on)
tr
td(off)
tf
VDF
trr
—
—
—
—
—
—
Notes: 3. Pulse test
Typ
—
—
—
—
—
10
18
20
1000
280
160
9
3.6
3.2
12
22
55
9
0.82
25
Max
—
—
±10
1
2.5
13
27
—
—
—
—
—
—
—
—
—
—
—
1.07
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10mA, VGS = 0
I
G
=
±100µA,
V
DS
=
0
VGS = ±16V, VDS = 0
VDS = 30V, VGS = 0
VDS = 10V, I D = 1mA
ID = 6A, VGS = 10V Note3
I = 6A, V = 4.5V Note3
D GS
ID = 6A, VDS = 10V Note3
VDS = 10V
VGS = 0
f = 1MHz
VDD = 10 V
VGS = 5 V
ID = 16 A
VGS =10V, ID = 6A
VDD ≈ 10V
RL = 1.67Ω
Rg = 4.7Ω
IF = 12A, VGS = 0 Note3
IF =12A, VGS = 0
diF/ dt =50A/µs
Rev.4, Dec. 2002, page 3 of 3
5 Page 
• MOS2 & Schottky Barrier Diode
Power vs. Temperature Derating
8.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
6.0
4.0
2.0
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0 50 100 150 200
Ambient Temperature Ta (°C)
HAT2126RP
Maximum Safe Operation Area
500
10 µs
100
10
1
DC OperaPtiWon
Operation in
1 ms 100 µs
=(P1W0<m1Ns0oste) 4
this area is
0.1 limited by R DS(on)
Ta = 25°C
0.01 1 shot Pulse
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10 V
Pulse Test
40 4 V 2.3 V
30
2.1 V
20
10 V GS = 1.9 V
0 2 4 6 8 10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
50
V DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
10 25°C
-25°C
0 1 23 45
Gate to Source Voltage V GS (V)
Rev.4, Dec. 2002, page 9 of 9
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet HAT2126RP.PDF ] | |
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