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HAT2132H PDF даташит

Спецификация HAT2132H изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2132H
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2132H Даташит, Описание, Даташиты
HAT2132H
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low drive current.
Low on-resistance
www.DataSheet4U.cLoomw profile
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK )
5
1 234
4
G
5
D
S SS
1 23
REJ03G0177-0300
Rev.3.00
Dec 07, 2006
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID(pulse) Note1
IDR
IDR(pulse) Note1
IAP Note3
EAR Note3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
6
24
6
24
6
2.4
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.3.00 Dec 07, 2006 page 1 of 6









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HAT2132H Даташит, Описание, Даташиты
HAT2132H
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
www.DataSheetT4uUr.nco-omn delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
200
3.0
2.7
Notes: 4. Pulse test
Typ
4.7
0.36
450
65
13
19
26
48
9
12.5
2.5
6
0.85
95
Max
1
±0.1
4.0
0.45
1.30
Unit
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 3 A, VDS = 10 V Note4
ID = 3 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 3 A
VGS = 10 V
RL = 33.3
Rg = 10
VDD = 160 V
VGS = 10 V
ID = 6 A
IF = 6 A, VGS = 0 Note4
IF = 6 A, VGS = 0
diF/dt = 100 A/µs
Rev.3.00 Dec 07, 2006 page 2 of 6









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HAT2132H Даташит, Описание, Даташиты
HAT2132H
Main Characteristics
Power vs. Temperature Derating
40
30
20
www.DataSheet4U.com
10
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
10
10 V
8
6
8V
6.5 V
Pulse Test
6V
4
5.5 V
2
VGS = 5 V
0
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
6
4 ID = 8 A
5A
2
2A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.3.00 Dec 07, 2006 page 3 of 6
Maximum Safe Operation Area
100
30
10
100
10
µs
µs
3 DC
1
0.3
(Tc =O2p5e°raCt)ion
Operation in
0.1 this area is
0.03
limited by RDS (on)
Ta = 25°C
0.01
0.1 0.3 1 3 10 30
100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10
VDS = 10 V
Pulse Test
8
6
4
Tc = 75°C
2
0
024
25°C
–25°C
68
10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
2
1
0.5 VGS = 10 V, 15 V
0.2
0.1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)










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Номер в каталогеОписаниеПроизводители
HAT2132HSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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