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HAT2188WP PDF даташит

Спецификация HAT2188WP изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET Power Switching».

Детали детали

Номер произв HAT2188WP
Описание Silicon N Channel Power MOS FET Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2188WP Даташит, Описание, Даташиты
HAT2188WP
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
Low drive current
www.DataSheet4U.cHoimgh density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
D DDD
4
G
S SS
1 23
5 678
4 32 1
REJ03G0534-0500
Rev.5.00
Mar.24.2005
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
200
±30
12
24
12
24
12
9.6
25
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.5.00, Mar.24.2005, page 1 of 3









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HAT2188WP Даташит, Описание, Даташиты
HAT2188WP
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
www.DataSheetR4Ue.vceormse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
200
3.0
5
Notes: 4. Pulse test
Typ
9
0.135
Max
1
±0.1
4.5
0.157
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 200 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 6 A, VDS = 10 V Note4
ID = 6 A, VGS = 10 VNote4
710
140
11
26
27
54
7
15
4
6
0.85
110
— pF VDS = 25 V
— pF VGS = 0
— pF f = 1 MHz
— ns ID = 6 A
— ns VGS = 10 V
— ns RL = 16.7
— ns Rg = 10
— nC VDD = 160 V
— nC VGS = 10 V
— nC ID = 12 A
1.4 V IF = 12 A, VGS = 0 Note4
— ns IF = 12 A, VGS = 0
diF/dt = 100 A/µs
Rev.5.00, Mar.24.2005, page 2 of 3









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HAT2188WP Даташит, Описание, Даташиты
HAT2188WP
Package Dimensions
JEITA Package Code
RENESAS Code
PWSN0008DA-A
Package Name
WPAK
MASS[Typ.]
0.085g
5.1 ± 0.2
0.8Max
www.DataSheet4U.com
0.635Max
1.27Typ
4.9 ± 0.1
0.04Min
0.2Typ
4.21Typ
1.27Typ
3.9 ± 0.2
Unit: mm
0.4 ± 0.06
(Ni/Pd/Au plating)
Ordering Information
Part Name
Quantity
Shipping Container
HAT2188WP-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00, Mar.24.2005, page 3 of 3










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Номер в каталогеОписаниеПроизводители
HAT2188WPSilicon N Channel Power MOS FET Power SwitchingRenesas Technology
Renesas Technology

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