|
|
PDF CHA7012 Data sheet ( Hoja de datos )
| Número de pieza | CHA7012 | |
| Descripción | X-band HBT High Power Amplifier | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CHA7012 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
CHA7012
X-band HBT High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7012 chip is a monolithic two-
stage GaAs high power amplifier designed
www.DataSheet4U.cfomr X band applications.
This device is manufactured using a GaInP
HBT process, including, via holes through
the substrate and air bridge. A nitride layer
protects the transistors and the passive
components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
-the backside of the chip is both RF and
DC grounded
-bond pads and back side are gold plated
for compatibility with eutectic die attach
method and thermosonic or
thermocompression bonding process.
Main Features
Frequency band : 9.2 -10.4GHz
Output power (P3dB ): 38.5dBm
High linear gain: > 20dB
High PAE: > 38%
Two biasing modes:
-VDigital control thanks to TTL interface
-VAnalog control thanks to biasing
circuit
Chip size: 5.00 x 3.68 x 0.1mm
TI Vc TO
TTL
Circuit
Vctrl Vc Vc
Biasing
Circuit
IN OUT
TTL
Circuit
TI Vc TO
Biasing
Circuit
Vctrl Vc Vc
44
PAE @ 3dBc (%)
40
36 Pout @ 3dBc
(dBm
32
28
Linear Gain (Pin=0dBm)
24
20
16
9 9.2 9.4 9.6 9.8 10 10.2 10.4 10.6
Main Characteristics
Frequency( GHz)
Pout & PAE @3dBc and Linear Gain (Temperature 25°C)
Vc=7.5V, Ic (Quiescent) = 1.9A, Pulse width=100µs, Duty cycle = 20%
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range
9.2 10.4 GHz
Psat Saturated output power @ 25°C
9W
P_3dBc Output power @ 3dBc @ 25°C
7W
G Small signal gain @ 25°C
20 dB
Top Operating temperature range -40 +80 °C
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHA70127235 - 23 Aug 07
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
1 page  
X-band High Power Amplifier
CHA7012
www.DataSheet4U.com
40
38
36
34 9.2GHz
9.4GHz
32 9.6GHz
9.8GHz
30 10GHz
10.2GHz
28 10.4GHz
26
-1 0 1 2 3 4 5 6
Compression (dB)
Output Power @ 25°C versus compression and frequenc y
7
50
45
40
35
30
25
20
15
10
5
0
-1 0 1 2 3 4 5
Compression (dB)
PAE @ 25°C versus compression and frequency
9.2GHz
9.4GHz
9.6GHz
9.8GHz
10GHz
10.2GHz
10.4GHz
67
8
8
Ref. : DSCHA70127235 - 23 Aug 07
5/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CHA7012.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CHA7010 | X-band GaInP HBT High Power Amplifier | United Monolithic Semiconductors |
| CHA7012 | X-band HBT High Power Amplifier | United Monolithic Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |