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C3622 PDF даташит

Спецификация C3622 изготовлена ​​​​«NEC» и имеет функцию, называемую «NPN Transistor - 2SC3622».

Детали детали

Номер произв C3622
Описание NPN Transistor - 2SC3622
Производители NEC
логотип NEC логотип 

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C3622 Даташит, Описание, Даташиты
DATA SHEET
SILICON TRANSISTORS
2SC3622, 3622A
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING
FEATURES
• High hFE:
www.DataSheet4U.com
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA
• Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
• High VEBO:
VEBO: 12 V (2SC3622)
VEBO: 15 V (2SC3622A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
PT
Tj
Tstg
Ratings
2SC3622 2SC3622A
60
50
12 15
150
250
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 50 V, IE = 0
Emitter cutoff current
IEBO VEB = 10 V, IC = 0
DC current gain
hFE1 * VCE = 5.0 V, IC = 1.0 mA
DC current gain
hFE2 * VCE = 5.0 V, IC = 100 mA
DC base voltage
VBE * VCE = 5.0 V, IC = 1.0 mA
Collector saturation voltage VCE(sat) * IC = 50 mA, IB = 5.0 mA
Base saturation voltage
Gain bandwidth product
VBE(sat) *
fT
IC = 50 mA, IB = 5.0 mA
VCE = 5.0 V, IE = 10 mA
Output capacitance
Cob VCB = 5 V, IE = 0, f = 1.0 MHz
Turn-on time
Storage temperature
Fall time
ton VCC = 10 V, VBE(off) = –2.7 V
tstg IC = 50 mA
toff IB1 = IB2 = 1 mA
* Pulse test PW 350 µs, duty cycle 2% per pulsed
PACKAGE DRAWING (UNIT: mm)
MIN.
1000
200
TYP.
1800
350
560
0.07
0.8
250
3.0
0.13
0.72
1.22
MAX.
100
100
3200
0.30
1.2
Unit
nA
nA
mV
V
V
MHz
pF
µs
µs
µs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16151EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928









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C3622 Даташит, Описание, Даташиты
hFE CLASSIFICATION
Marking
hFE1
L
1000 to 2000
K
1600 to 3200
www.DataSheet4U.com
2SC3622, 3622A
2 Data Sheet D16151EJ1V0DS









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C3622 Даташит, Описание, Даташиты
TYPICAL CHARACTERISTICS (Ta = 25°C)
www.DataSheet4U.com
2SC3622, 3622A
Data Sheet D16151EJ1V0DS
3










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