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GF4410 PDF даташит

Спецификация GF4410 изготовлена ​​​​«General Semiconductor» и имеет функцию, называемую «N-channel Enhancement-mode MOSFET».

Детали детали

Номер произв GF4410
Описание N-channel Enhancement-mode MOSFET
Производители General Semiconductor
логотип General Semiconductor логотип 

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GF4410 Даташит, Описание, Даташиты
GF4410
N-Channel Enhancement-Mode MOSFET
TGREENNCFHET®
SO-8
VDS 30V RDS(ON) 13.5mID 10A
0.197 (5.00)
0.189 (4.80)
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8
1
0.050 (1.27)
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
4
Dimensions in inches
and (millimeters)
0.020 (0.51)
0.013 (0.33)
0.019
0.010
(0.48)
(0.25)
x
45
°
0.009 (0.23)
0.007 (0.18)
0.009 (0.23)
0.004 (0.10)
0.069 (1.75)
0.053 (1.35)
0°8°
0.050(1.27)
0.016 (0.41)
0.245 (6.22)
Min.
0.05 (1.27)
0.04 (1.02)
0.165 (4.19)
0.155 (3.94)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Mounting Pad Layout
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any Weight: 0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
VGS ±20
Continuous Drain Current
TJ = 150°C(1)
TA = 25°C
TA = 70°C
ID
10
8
Pulsed Drain Current
Continuous Source Current (Diode Conduction)(1)
IDM
IS
50
2.3
Maximum Power Dissipation
TA = 25°C
TA = 70°C
PD
2.5
1.6
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient Thermal Resistance(1)
TJ, Tstg
RθJA
–55 to 150
50
Notes: (1) Surface Mounted on FR4 Board, t 10 sec.
Unit
V
A
W
°C
°C/W
7/10/01









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GF4410 Даташит, Описание, Даташиты
GF4410
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
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Zero Gate Voltage Drain Current
On-State Drain Current(1)
VGS(th)
IGSS
IDSS
ID(on)
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 30V, VGS = 0V
VDS=30V, VGS=0V, TJ=55°C
VDS 5V, VGS = 10V
Drain-Source On-State Resistance(1)
Forward Transconductance(1)
RDS(on)
gfs
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 5A
VDS = 15V, ID = 10A
Dynamic
Total Gate Charge
VDS = 15V, ID = 10A, VGS = 5V
Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Diode Forward Voltage(1)
Source-Drain Reverse Recovery Time
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS = 15V, VGS = 10V
ID = 10A
VDD = 25V, RL = 25
ID 1A, VGEN = 10V
RG = 6
VGS = 0V
VDS = 25V
f = 1.0MHZ
VSD IS = 2.3A, VGS = 0V
trr IF = 2.3A, di/dt = 100A/µs
Min
1.0
20
Typ Max
––
±100
1
25
––
8 13.5
12 20
38
23
42
5
8
9
12
70
35
2100
320
190
32
60
15
20
100
80
0.75 1.1
55 80
Unit
V
nA
µA
A
m
S
nC
ns
pF
V
ns
Note:
(1) Pulse test; pulse width 300 µs,
duty cycle 2%
Switching
Test Circuit
VIN
VDD
RD
D
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
VGEN
RG
G
S
DUT
Output, VOUT
Input, VIN 10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH









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GF4410 Даташит, Описание, Даташиты
GF4410
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
50
VGS=10V
6.0
V
4.5V
3.5V
40 5.0
V
4.0V
30
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20
3.0V
10
2.5V
0
0 0.5 1 1.5 2 2.5 3
VDS -- Drain-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
1.8
ID = 250µA
1.6
1.4
1.2
1
0.8
0.6
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance
vs. Junction Temperature
1.6
VGS = 10V
ID = 10A
1.4
Fig. 2 – Transfer Characteristics
50
VDS = 10V
40
30
20
10
0
1
0.02
TJ = 125°C
--55°C
25°C
2 34
VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance
vs. Drain Current
5
0.016
0.012
VGS = 4.5V
0.008
0.004
VGS = 10V
0
0 10 20 30 40 50
ID -- Drain Current (A)
1.2
1
0.8
0.6
--50 --25 0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)










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