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PDF HMC608LC4 Data sheet ( Hoja de datos )
| Número de pieza | HMC608LC4 | |
| Descripción | GaAs PHEMT MEDIUM POWER AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v01.0707
5
Typical Applications
The HMC608LC4 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military End-Use
www.DataSheet4U.com
Functional Diagram
HMC608LC4
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Features
Output IP3: +33 dBm
Saturated Power: +27.5 dBm @ 23% PAE
Gain: 29.5 dB
Supply: +5.0V @ 310 mA
50 Ohm Matched Input/Output
RoHS Compliant 4x4 mm SMT Package
General Description
The HMC608LC4 is a high dynamic range GaAs
PHEMT MMIC Medium Power Amplifier housed in a
leadless “Pb free” SMT package. The amplifier has
two modes of operation: high gain mode (Vpd pin
shorted to ground); and low gain mode (Vpd pin left
open). The electrical specifications in the table below
are shown for the amplifier operating in high gain
mode. Operating from 9.5 to 11.5 GHz, the amplifier
provides 29.5 dB of gain, +27.5 dBm of saturated power
and 23% PAE from a +5.0 V supply voltage. Noise
figure is 6 dB while output IP3 is +33 dBm. The RF
I/Os are DC blocked and matched to 50 Ohms for ease
of use. The HMC608LC4 eliminates the need for wire
bonding, allowing use of surface mount manufacturing
techniques.
5 - 310
Electrical Specifications, TA = +25° C, Vdd1, 2, 3 = 5V, Idd = 310 mA [1], Vpd = GND [2]
Parameter
Frequency Range
Gain [3]
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd = Idd1 +Idd2 +Idd3)(Vdd = +5V, Vgg = -2.6V Typ.) [3]
[[1] Adjust Vgg between -3 to 0V to achieve Idd = 310 mA typical.
[2] Vpd= ground for high gain mode, Vpd = open for low gain mode.
[3] In low gain mode, typical gain is 22 dB and typical current is 67 mA.
Min. Typ. Max.
9.5 - 11.5
27 29.5
0.02
0.03
13
19
23 27
27.5
33
6.0
310 350
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v01.0707
5
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2, Vdd3)
Gate Bias Voltage (Vgg)
RF Input Power (RFin)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 22.18 mW/°C above 85 °C)
www.DataSheet4U.coTmhermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
7 Vdc
-4.0 to -1.0 Vdc
+10 dBm
175 °C
2W
45 °C/W
-65 to +150 °C
-40 to +85 °C
Outline Drawing
HMC608LC4
GaAs PHEMT MEDIUM
POWER AMPLIFIER, 9.5 - 11.5 GHz
Typical Supply Current vs. Vdd
Vdd (Vdc)
Idd (mA)
+4.5
300
+5.0
310
+5.5
325
Note: Amplifier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 310 mA at +5.0V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
5 - 314
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA.
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER 50 MICROINCHES MINIMUM NICKEL
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. CHARACTERS TO BE HELVETICA MEDIUM, .025 HIGH, BLACK INK, OR LASER MARK LOCATED APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05MM DATUM – C –
7. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC608LC4.PDF ] | |
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