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PDF HMC609 Data sheet ( Hoja de datos )
| Número de pieza | HMC609 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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Hay una vista previa y un enlace de descarga de HMC609 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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v01.0707
1
Typical Applications
The HMC609 is ideal for:
• Fixed Microwave
• Point-to-Multi-Point Radios
• Test & Measurement Equipment
www.DataSheet4U.c•oRmadar & Sensors
• Military & Space
Functional Diagram
HMC609
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Features
Excellent Gain Flatness: ±0.2 dB
High Gain: 20.5 dB
Low Noise Figure: 3 dB
Output IP3: +36 dBm
Output P1dB: +22 dBm
50 Ohm Matched Input/Output
Die Size: 2.1 x 1.3 x 0.1 mm
General Description
The HMC609 is a GaAs PHEMT MMIC Low Noise
Amplifier (LNA) chip which operates from 2 to 4 GHz.
The HMC609 features extremely flat performance
characteristics including 20 dB of small signal gain,
3.0 dB of noise figure and output IP3 of +36 dBm
across the operating band. This versatile LNA is ideal
for hybrid and MCM assemblies due to its compact
size, consistent output power and DC blocked RF I/
O’s. All data is measured with the chip in a 50 Ohm test
fixture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Electrical Specifications, TA = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA *
Parameter
Min.
Frequency Range
Gain
19
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
18
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd1 + Idd2)
*Adjust Vgg1 = Vgg2 between -1.5V to -0.5V (typ. -0.9V) to achieve total drain bias of 170mA
Typ.
2-4
20.5
0.005
3
20
17
21
22
36
170
Max.
0.01
4
220
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 108
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v01.0707
HMC609
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
1
Pad Descriptions
Pad Number
Function
1 RFIN
2, 5, 6, 10
Die Bottom
GND
Description
This pad is AC coupled and matched to
50 Ohms from 2 - 4 GHz.
These pads & die bottom must be connected to RF/DC
ground.
www.DataSheet4U.com
3, 4
Vdd1, Vdd2
Power Supply Voltage for the amplifier.
External bypass capacitors of 100 pF & 0.1 μF are required.
Interface Schematic
7 RFOUT
This pad is AC coupled and matched to
50 Ohms from 2 - 4 GHz.
8, 9
Vgg2, Vgg1
Gates supply voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
Assembly Diagram
1 - 112
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC609.PDF ] | |
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