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PDF HMC616LP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC616LP3E | |
| Descripción | GaAs SMT PHEMT LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v00.0508
5
Typical Applications
The HMC616LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
www.DataSheet4U.c•oPmublic Safety Radio
• DAB Receivers
Functional Diagram
HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Features
Low Noise Figure: 0.5 dB
High Gain: 24 dB
High Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC616LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 175 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC616LP3(E) shares
the same package and pinout with the HMC617-
LP3(E) and HMC618LP3(E) LNAs. The HMC616LP3(E)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application.
5 - 236
Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
Vdd = +3 Vdc
Min. Typ. Max. Min. Typ. Max.
175 - 230
230 - 660
20 22.5
15 20
0.002
0.5 0.8
0.5 0.8
10 16
9 10
Vdd = +5 Vdc
Min. Typ. Max. Min. Typ. Max.
175 - 230
230 - 660
21 24
15 21
0.005
0.5 0.8
0.5 0.8
12 14
9 10
Units
MHz
dB
dB/ °C
dB
dB
dB
8 11
10 15
11 15
14 19
dBm
8.5 13
11 15.5
12.5 17.5
15.5 19.5
dBm
20 30 32 37 dBm
30 45
30 45
90 115
90 115 mA
* Rbias resistor sets current, see application circuit herein
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v00.0508
5
Gain Low Frequency Tune [1]
26
24
22
20
www.DataSheet4U.com
18
Vdd=5V
Vdd=3V
16
14
0.15
0.175 0.2 0.225
FREQUENCY (GHz)
0.25
HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Input Return Loss Low Frequency Tune [1]
0
-5
-10
-15
-20
-25
0.15
Vdd=5V
Vdd=3V
0.175 0.2 0.225
FREQUENCY (GHz)
0.25
Output Return Loss Low Frequency Tune [1]
0
-5
-10
-15
-20
-25
0.15
Vdd=5V
Vdd=3V
0.175 0.2 0.225
FREQUENCY (GHz)
0.25
P1dB Low Frequency Tune [1]
22
20
18
Vdd=5V
vdd=3V
16
14
12
10
8
0.15
0.175 0.2 0.225
FREQUENCY (GHz)
0.25
Output IP3 Low Frequency Tune [1]
40
36
Vdd=5V
Vdd=3V
32
28
24
20
16
0.15
0.175 0.2 0.225
FREQUENCY (GHz)
0.25
Noise Figure Low Frequency Tune [1] [2]
1
0.9
0.8
Vdd=5V
Vdd=3V
0.7
0.6
0.5
0.4
0.3
0.2
0.15
0.175 0.2 0.225
FREQUENCY (GHz)
0.25
5 - 240
[1] Rbias = 2kΩ, L1 = 82 nH, L2 = 82 nH [2] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC616LP3E.PDF ] | |
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