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PDF HMC636ST89 Data sheet ( Hoja de datos )
| Número de pieza | HMC636ST89 | |
| Descripción | GaAs PHEMT HIGH LINEARITY Gain Block | |
| Fabricantes | Hittite Microwave Corporation | |
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Hay una vista previa y un enlace de descarga de HMC636ST89 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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HMC636ST89 / 636ST89E
v00.1207
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
Typical Applications
The HMC636ST89(E) is ideal for:
• Cellular / PCS / 3G
• WiMAX, WiBro, & Fixed Wireless
www.DataSheet4U.com • CATV & Cable Modem
• Microwave Radio
Functional Diagram
6
Features
Low Noise Figure: 2.2 dB
High P1dB Output Power: +22 dBm
High Output IP3: +40 dBm
Gain: 13 dB
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
General Description
The HMC636ST89(E) is a GaAs PHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a
Low Noise Amplifier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplifier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplifier compatible with virtually
any PCB material or thickness.
Electrical Specifications, Vs= 5.0 V, TA = +25° C
Parameter
Min Typ. Max
Frequency Range
0.2 - 2.0
Gain
10 13
Gain Variation Over Temperature
0.01
0.02
Input Return Loss
10
Output Return Loss
13
Reverse Isolation
22
Output Power for 1 dB Compression (P1dB)
19
22
Output Third Order Intercept (IP3)
36 39
Noise Figure
2.5
Supply Current (Icq)
155
Note: Data taken with broadband bias tee on device output.
Min. Typ. Max.
2.0 - 4.0
5 10
0.01
0.02
10
15
20
20 23
36 39
2
155
Units
GHz
dB
dB/ °C
dB
dB
dBm
dB
dBm
dB
mA
6 - 326
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
Pin Descriptions
Pin Number
Function
www.DataSheet4U.com
1
RFIN
3 RFOUT
6 2, 4 GND
HMC636ST89 / 636ST89E
v00.1107
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
Description
This pin is DC coupled. An off-chip
DC blocking capacitor is required.
RF Output and DC BIAS for the amplifier.
See Application Circuit for off-chip components.
These pins and package bottom must
be connected to RF/DC ground.
Interface Schematic
Application Circuit
6 - 330
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC636ST89.PDF ] | |
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