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HMC616LP3 PDF даташит

Спецификация HMC616LP3 изготовлена ​​​​«Hittite Microwave Corporation» и имеет функцию, называемую «GaAs SMT PHEMT LOW NOISE AMPLIFIER».

Детали детали

Номер произв HMC616LP3
Описание GaAs SMT PHEMT LOW NOISE AMPLIFIER
Производители Hittite Microwave Corporation
логотип Hittite Microwave Corporation логотип 

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HMC616LP3 Даташит, Описание, Даташиты
v00.0508
5
Typical Applications
The HMC616LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
www.DataSheet4U.coPmublic Safety Radio
• DAB Receivers
Functional Diagram
HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Features
Low Noise Figure: 0.5 dB
High Gain: 24 dB
High Output IP3: +37 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC616LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 175 and 660 MHz. The amplifier
has been optimized to provide 0.5 dB noise figure,
24 dB gain and +37 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent with minimal external matching and bias
decoupling components. The HMC616LP3(E) shares
the same package and pinout with the HMC617-
LP3(E) and HMC618LP3(E) LNAs. The HMC616LP3(E)
can be biased with +3V to +5V and features an
externally adjustable supply current which allows the
designer to tailor the linearity performance of the LNA
for each application.
5 - 236
Electrical Specifications, TA = +25° C, Rbias = 3.92k Ohms*
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
Vdd = +3 Vdc
Min. Typ. Max. Min. Typ. Max.
175 - 230
230 - 660
20 22.5
15 20
0.002
0.5 0.8
0.5 0.8
10 16
9 10
Vdd = +5 Vdc
Min. Typ. Max. Min. Typ. Max.
175 - 230
230 - 660
21 24
15 21
0.005
0.5 0.8
0.5 0.8
12 14
9 10
Units
MHz
dB
dB/ °C
dB
dB
dB
8 11
10 15
11 15
14 19
dBm
8.5 13
11 15.5
12.5 17.5
15.5 19.5
dBm
20 30 32 37 dBm
30 45
30 45
90 115
90 115 mA
* Rbias resistor sets current, see application circuit herein
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com









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HMC616LP3 Даташит, Описание, Даташиты
v00.0508
Broadband Gain & Return Loss
25
20
15
10
5
0
www.DataSheet4U.com -5
-10
-15
-20
-25
0.2
Vdd= 5V
Vdd= 3V
S21
S22
S11
0.4 0.6 0.8
1
FREQUENCY (GHz)
1.2
1.4
HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
Gain vs. Temperature [1]
24
22
20
+25C
18 +85C
- 40C
16
14
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
5
Gain vs. Temperature [2]
24
22
20
+25C
18 +85C
- 40C
16
14
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
+25C
-5 +85C
- 40C
-10
-15
-20
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Output Return Loss vs. Temperature [1]
0
+25C
-5 +85C
- 40C
-10
-15
-20
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-5
-10 +25C
+85C
-15 - 40C
-20
-25
-30
-35
-40
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
[1] Vdd = 5V [2] Vdd = 3V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 237









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HMC616LP3 Даташит, Описание, Даташиты
v00.0508
5
Noise Figure vs. Temperature [1]
1
0.9
Vdd=5V
0.8 Vdd=3V
0.7 +85C
0.6
www.DataSheet4U.com0.5
0.4 +25 C
0.3
-40C
0.2
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
HMC616LP3 / 616LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 175 - 660 MHz
P1dB vs. Temperature
24
22
20
Vdd=5V
18
16
Vdd=3V
14
12
+25 C
+85 C
- 40 C
10
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Psat vs. Temperature
24
22
20 Vdd=5V
18
16
Vdd=3V
14
12
+25 C
+85 C
- 40 C
10
0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7
FREQUENCY (GHz)
Output IP3 and Idd vs.
Supply Voltage @ 400 MHz
40
140
38 120
36 100
34 80
32 60
30 40
28 20
26 0
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
VOLTAGE SUPPLY (V)
Output IP3 vs. Temperature
Vdd=5V
40
36
32
28
24
0.2
Vdd=3V
0.3
0.4 0.5
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
0.6 0.7
Output IP3 and Idd vs.
Supply Voltage @ 500 MHz
40
140
38 120
36 100
34 80
32 60
30 40
28 20
26 0
2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5
VOLTAGE SUPPLY (V)
5 - 238
[1] Measurement reference plane shown on evaluation PCB drawing.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com










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