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PDF HMC618LP3 Data sheet ( Hoja de datos )
| Número de pieza | HMC618LP3 | |
| Descripción | GaAs SMT PHEMT LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave Corporation | |
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v04.0508
5
Typical Applications
The HMC618LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femto Cells
www.DataSheet4U.c•oPmublic Safety Radios
Functional Diagram
HMC618LP3 / 618LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 0.75 dB
Gain: 19 dB
OIP3: 36 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm SMT Package: 9 mm2
General Description
The HMC618LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.7 - 2.2 GHz. The amplifier has
been optimized to provide 0.75 dB noise figure,
19 dB gain and +36 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC618LP3(E) shares the same package and
pinout with the HMC617LP3(E) 0.55 - 1.2 GHz LNA.
The HMC618LP3(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. The
HMC618LP3(E) is an ideal replacement for the
HMC375LP3(E).
5 - 256
Electrical Specifications, TA = +25° C, Rbias = 10K
Parameter
Vdd = 3 Vdc
Min. Typ. Max. Min. Typ. Max.
Frequency Range
1700 - 2000
2000 - 2200
Gain
15 18
12.5 15.8
Gain Variation Over Temperature
0.009
0.009
Noise Figure
0.90 1.2
0.9 1.2
Input Return Loss
17 19
Output Return Loss
13 11
Output Power for 1 dB
Compression (P1dB)
12 15
13.5 15
Saturated Output Power (Psat)
16
16
Output Third Order Intercept (IP3)
28
28
Supply Current (Idd)
47 65
47 65
* Rbias resistor sets current, see application circuit herein
Vdd = 5 Vdc
Min. Typ. Max. Min. Typ. Max.
1700 - 2000
2000 - 2200
16 19
13.5 17
0.008
0.008
0.75 1.1
0.85 1.15
18 19.5
12.5
9.5
16.5 20
18 20
20.5
35
117
155
21
36
117 155
Units
MHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
v04.0508
5
Output IP3 vs. Rbias @ 1750 MHz
36
34
32
30
www.DataSheet4U.com28
26
Vdd=5V
Vdd=3V
24
22
100
1000
Rbias (Ohms)
10000
Output IP3 vs. Rbias @ 2100 MHz
38
36
34
32 Vdd=5V
Vdd=3V
30
28
26
24
100
1000
Rbias (Ohms)
10000
HMC618LP3 / 618LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Gain, Noise Figure & Rbias @ 1750 MHz
22 1.6
21 1.4
20 1.2
19 1
18 0.8
17 0.6
16 Vdd=5V
Vdd=3V
15
0.4
0.2
14
100
1000
Rbias(Ohms)
0
10000
Gain, Noise Figure & Rbias @ 2100 MHz
20 1.2
19 1
18 0.8
17 0.6
16 Vdd=5V
Vdd=3V
15
0.4
0.2
14
100
1000
Rbias(Ohms)
0
10000
5 - 260
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC618LP3.PDF ] | |
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