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HMC618LP3E PDF даташит

Спецификация HMC618LP3E изготовлена ​​​​«Hittite Microwave Corporation» и имеет функцию, называемую «GaAs SMT PHEMT LOW NOISE AMPLIFIER».

Детали детали

Номер произв HMC618LP3E
Описание GaAs SMT PHEMT LOW NOISE AMPLIFIER
Производители Hittite Microwave Corporation
логотип Hittite Microwave Corporation логотип 

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HMC618LP3E Даташит, Описание, Даташиты
v04.0508
5
Typical Applications
The HMC618LP3(E) is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femto Cells
www.DataSheet4U.coPmublic Safety Radios
Functional Diagram
HMC618LP3 / 618LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 0.75 dB
Gain: 19 dB
OIP3: 36 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm SMT Package: 9 mm2
General Description
The HMC618LP3(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.7 - 2.2 GHz. The amplifier has
been optimized to provide 0.75 dB noise figure,
19 dB gain and +36 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC618LP3(E) shares the same package and
pinout with the HMC617LP3(E) 0.55 - 1.2 GHz LNA.
The HMC618LP3(E) can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. The
HMC618LP3(E) is an ideal replacement for the
HMC375LP3(E).
5 - 256
Electrical Specifications, TA = +25° C, Rbias = 10K
Parameter
Vdd = 3 Vdc
Min. Typ. Max. Min. Typ. Max.
Frequency Range
1700 - 2000
2000 - 2200
Gain
15 18
12.5 15.8
Gain Variation Over Temperature
0.009
0.009
Noise Figure
0.90 1.2
0.9 1.2
Input Return Loss
17 19
Output Return Loss
13 11
Output Power for 1 dB
Compression (P1dB)
12 15
13.5 15
Saturated Output Power (Psat)
16
16
Output Third Order Intercept (IP3)
28
28
Supply Current (Idd)
47 65
47 65
* Rbias resistor sets current, see application circuit herein
Vdd = 5 Vdc
Min. Typ. Max. Min. Typ. Max.
1700 - 2000
2000 - 2200
16 19
13.5 17
0.008
0.008
0.75 1.1
0.85 1.15
18 19.5
12.5
9.5
16.5 20
18 20
20.5
35
117
155
21
36
117 155
Units
MHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com









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HMC618LP3E Даташит, Описание, Даташиты
v04.0508
Broadband Gain & Return Loss [1] [2]
25
S21
15
5
www.DataSheet4U.com -5
S22
Vdd=5V
Vdd=3V
-15
S11
-25
0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3
FREQUENCY (GHz)
HMC618LP3 / 618LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Gain vs. Temperature [1]
24
22
20
18
+25C
16 +85C
- 40C
14
12
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
5
Gain vs. Temperature [2]
22
20
18
16
+25C
14 +85C
- 40C
12
10
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
-5
+25 C
-10 +85 C
- 40 C
-15
-20
-25
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Output Return Loss vs. Temperature [1]
0
+25 C
-5 +85 C
- 40 C
-10
-15
-20
-25
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-5
-10 +25 C
+85 C
-15 - 40 C
-20
-25
-30
-35
-40
1.6 1.7 1.8 1.9 2 2.1 2.2 2.3
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 257









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HMC618LP3E Даташит, Описание, Даташиты
v04.0508
5
Noise Figure vs Temperature [1] [2] [4]
1.6
1.4 Vdd=5V
Vdd=3V
1.2
+85C
1
0.8
www.DataSheet4U.com0.6
0.4
+25 C
-40C
0.2
0
1.6 1.7 1.8 1.9 2 2.1 2.2
FREQUENCY (GHz)
2.3
HMC618LP3 / 618LP3E
GaAs SMT PHEMT LOW NOISE
AMPLIFIER, 1.7 - 2.2 GHz
Output P1dB vs. Temperature [1] [2]
24
22
20 Vdd=5V
18
16
14
12
10
1.6
Vdd=3V
+25 C
+85 C
- 40 C
1.7 1.8 1.9 2 2.1
FREQUENCY (GHz)
2.2
2.3
5 - 258
Psat vs. Temperature [1] [2]
24
22
Vdd=5V
20
18
Vdd=3V
16
14
+25 C
+85 C
12 -40 C
10
1.6 1.7 1.8 1.9 2 2.1 2.2
FREQUENCY (GHz)
2.3
Output IP3 vs. Temperature [1] [2]
40
38
Vdd=5V
36
34
32 +25 C
+85 C
30 - 40 C
28
26
Vdd=3V
24
1.6 1.7 1.8 1.9 2 2.1 2.2
FREQUENCY (GHz)
2.3
Output IP3 and Idd vs.
Supply Voltage @ 1750 MHz [3]
38
36
34
32 Idd
30
28
26
24
2.7 3.1 3.5 3.9 4.3 4.7
VOLTAGE SUPPLY (V)
140
120
100
80
IP3
60
40
20
0
5.1 5.5
Output IP3 and Idd vs.
Supply Voltage @ 2100 MHz [3]
38
36 IP3
34
32
30
28
26
24
2.7 3.1 3.5 3.9 4.3 4.7
VOLTAGE SUPPLY (V)
Idd
5.1
[1] Vdd = 5V, Rbias = 10K [2] Vdd = 3V, Rbias = 10K
[3] Rbias = 10K [4] Measurement reference plane shown on evaluation PCB drawing.
140
120
100
80
60
40
20
0
5.5
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com










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Номер в каталогеОписаниеПроизводители
HMC618LP3GaAs SMT PHEMT LOW NOISE AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation
HMC618LP3GaAs SMT PHEMT LOW NOISE AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation
HMC618LP3EGaAs SMT PHEMT LOW NOISE AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation
HMC618LP3EGaAs SMT PHEMT LOW NOISE AMPLIFIERHittite Microwave Corporation
Hittite Microwave Corporation

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