NUF4310MN PDF даташит
Спецификация NUF4310MN изготовлена «ON Semiconductor» и имеет функцию, называемую «Low Capacitance 4-Line EMI Filter». |
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Детали детали
Номер произв | NUF4310MN |
Описание | Low Capacitance 4-Line EMI Filter |
Производители | ON Semiconductor |
логотип |
4 Pages
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NUF4310MN
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Low Capacitance 4-Line
EMI Filter with ESD
Protection in WDFN8
Package
This device is a 4 line EMI filter array for wireless applications.
Greater than −25 dB attenuation is obtained at frequencies from
800 MHz to 4.0 GHz. The NUF4310MN has a cut−off frequency of
185 MHz. This WDFN package is specifically designed to enhance
EMI filtering for low−profile or slim design electronics especially
where space and height is a premium. It also offers ESD
protection−clamping transients from static discharges. ESD protection
is provided across all capacitors.
Features
• EMI Filtering and ESD Protection
• Integration of 20 Discrete Components
• Compliance with IEC61000−4−2 (Level 4)
>8 kV (Contact) [I/O Pins to GND]
• WDFN Package, 1.6 x 1.0 mm
• Moisture Sensitivity Level 1
• ESD Ratings: Machine Model = C
Human Body Model = 3B
• This is a Pb−Free Device*
Benefits
• Reduces EMI/RFI Emissions on a Data Line
• Low Profile Package; Typical Height of 0.75 mm
• Design−Friendly and Easy−to−Use Pin Configurations,
Particularly for Portable Electronics
• Integrated Solution Offers Cost and Space Savings in WDFN
Package
• Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass
Filter Response
• Integrated Solution Improves System Reliability
Applications
• EMI Filtering and ESD Protection for Data Lines
• Keypad Interface and Protection for Portable Electronics
• Bottom Connector Interface for Mobile Handsets
• Notebook Computers and Digital Cameras
• LCD Display Interface in Mobile Handsets
• Camera Display Interface in Mobile Handsets
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
1
Cd Cd
8
2
Cd Cd
7
3
Cd Cd
6
4
Cd Cd
5
(Top View)
8
1
WDFN8
CASE 511AF
MARKING
DIAGRAM
43MG
1G
43 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
14
85
ORDERING INFORMATION
Device
Package
Shipping†
NUF4310MNTAG WDFN8 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
October, 2008 − Rev. 0
1
Publication Order Number:
NUF4310MN/D
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NUF4310MN
MAXIMUM RATINGS
wwEwS.DDaDtaisSchhaeregt4eUIE.cCo6m1000−4−2
Parameter
Contact Discharge
Symbol
VPP
Value
8.0
Unit
kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Resistance
Capacitance (Notes 1 and 2)
Cut−Off Frequency (Note 3)
VRWM
VBR
IR
RA
Cd
f3dB
IR = 1.0 mA
VRWM = 3.3 V
IR = 10 mA
VR = 2.5 V, f = 1.0 MHz
Above this frequency,
appreciable attenuation occurs
6.0
85
7.2
5.0 V
7.0 8.0 V
100 nA
100 115 W
9.0 10.8 pF
185 MHz
1. Measured at 25°C.
2. Total Line Capacitance is two times the Diode Capacitance (Cd).
3. 50 W source and 50 W load termination.
http://onsemi.com
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NUF4310MN
TYPICAL PERFORMANCE CURVES
(TA= 25°C unless otherwise specified)
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0
0
−5 −10
−10
−20
−15
−20 −30
−25 −40
−30
−35 −50
−40
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
−60
1.E+10 1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
Figure 1. Typical Insertion Loss Characteristic
Figure 2. Typical Analog Crosstalk
1.E+10
2.0
1.5
1.0
0.5
00
1.0 2.0 3.0 4.0
REVERSE VOLTAGE (V)
110
108
106
104
102
100
98
96
94
92
90
5.0
−40 −20
0
20 40 60
TEMPERATURE (°C)
80
Figure 3. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance Cd at 2.5 V)
Figure 4. Typical Resistance over Temperature
http://onsemi.com
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Номер в каталоге | Описание | Производители |
NUF4310MN | Low Capacitance 4-Line EMI Filter | ON Semiconductor |
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