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NUF4310MN PDF даташит

Спецификация NUF4310MN изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Low Capacitance 4-Line EMI Filter».

Детали детали

Номер произв NUF4310MN
Описание Low Capacitance 4-Line EMI Filter
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NUF4310MN Даташит, Описание, Даташиты
NUF4310MN
www.DataSheet4U.com
Low Capacitance 4-Line
EMI Filter with ESD
Protection in WDFN8
Package
This device is a 4 line EMI filter array for wireless applications.
Greater than 25 dB attenuation is obtained at frequencies from
800 MHz to 4.0 GHz. The NUF4310MN has a cutoff frequency of
185 MHz. This WDFN package is specifically designed to enhance
EMI filtering for lowprofile or slim design electronics especially
where space and height is a premium. It also offers ESD
protectionclamping transients from static discharges. ESD protection
is provided across all capacitors.
Features
EMI Filtering and ESD Protection
Integration of 20 Discrete Components
Compliance with IEC6100042 (Level 4)
>8 kV (Contact) [I/O Pins to GND]
WDFN Package, 1.6 x 1.0 mm
Moisture Sensitivity Level 1
ESD Ratings: Machine Model = C
Human Body Model = 3B
This is a PbFree Device*
Benefits
Reduces EMI/RFI Emissions on a Data Line
Low Profile Package; Typical Height of 0.75 mm
DesignFriendly and EasytoUse Pin Configurations,
Particularly for Portable Electronics
Integrated Solution Offers Cost and Space Savings in WDFN
Package
Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass
Filter Response
Integrated Solution Improves System Reliability
Applications
EMI Filtering and ESD Protection for Data Lines
Keypad Interface and Protection for Portable Electronics
Bottom Connector Interface for Mobile Handsets
Notebook Computers and Digital Cameras
LCD Display Interface in Mobile Handsets
Camera Display Interface in Mobile Handsets
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
1
Cd Cd
8
2
Cd Cd
7
3
Cd Cd
6
4
Cd Cd
5
(Top View)
8
1
WDFN8
CASE 511AF
MARKING
DIAGRAM
43MG
1G
43 = Specific Device Code
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
14
85
ORDERING INFORMATION
Device
Package
Shipping
NUF4310MNTAG WDFN8 3000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
October, 2008 Rev. 0
1
Publication Order Number:
NUF4310MN/D









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NUF4310MN Даташит, Описание, Даташиты
NUF4310MN
MAXIMUM RATINGS
wwEwS.DDaDtaisSchhaeregt4eUIE.cCo6m100042
Parameter
Contact Discharge
Symbol
VPP
Value
8.0
Unit
kV
Operating Temperature Range
TOP
40 to 85
°C
Storage Temperature Range
TSTG
55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Resistance
Capacitance (Notes 1 and 2)
CutOff Frequency (Note 3)
VRWM
VBR
IR
RA
Cd
f3dB
IR = 1.0 mA
VRWM = 3.3 V
IR = 10 mA
VR = 2.5 V, f = 1.0 MHz
Above this frequency,
appreciable attenuation occurs
6.0
85
7.2
5.0 V
7.0 8.0 V
100 nA
100 115 W
9.0 10.8 pF
185 MHz
1. Measured at 25°C.
2. Total Line Capacitance is two times the Diode Capacitance (Cd).
3. 50 W source and 50 W load termination.
http://onsemi.com
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NUF4310MN Даташит, Описание, Даташиты
NUF4310MN
TYPICAL PERFORMANCE CURVES
(TA= 25°C unless otherwise specified)
www.DataSheet4U.com
0
0
5 10
10
20
15
20 30
25 40
30
35 50
40
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
60
1.E+10 1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
Figure 1. Typical Insertion Loss Characteristic
Figure 2. Typical Analog Crosstalk
1.E+10
2.0
1.5
1.0
0.5
00
1.0 2.0 3.0 4.0
REVERSE VOLTAGE (V)
110
108
106
104
102
100
98
96
94
92
90
5.0
40 20
0
20 40 60
TEMPERATURE (°C)
80
Figure 3. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance Cd at 2.5 V)
Figure 4. Typical Resistance over Temperature
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NUF4310MNLow Capacitance 4-Line EMI FilterON Semiconductor
ON Semiconductor

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