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PDF NTLJS1102P Data sheet ( Hoja de datos )
| Número de pieza | NTLJS1102P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTLJS1102P
www.DataSheet4U.com
Power MOSFET
−8 V, −8.1 A, mCOOL] Single P−Channel,
2x2 mm, WDFN package
Features
• WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
• Lowest RDS(on) in 2 x 2 mm Package
• 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate
Drive
• 2 x 2 mm Footprint Same as SC−88 Package
• Low Profile (<0.8 mm) for Easy Fit in Thin Environments
• This is a Halide−Free Device
• This is a Pb−Free Device
Applications
• High Side Load Switch
• Li Ion Battery Linear Mode Charging
• Optimized for Battery and Load Management Applications in
Portable Equipment
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Drain Current
(Note 1)
Steady
State
tv5s
Power
Dissipation
(Note 1)
Steady
State
tv5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
−8
±6
−6.2
−4.5
−8.1
1.9
3.3
V
V
A
W
Continuous
Drain Current
(Note 2)
Power
Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
−3.7
ID
−2.7
A
PD 0.7 W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage
Temperature
IDM
TJ, TSTG
−30
−55 to
150
A
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS
−5.5
A
TL 260 °C
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 30 mm2 [2 oz] including traces).
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V(BR)DSS
−8.0 V
RDS(on) MAX
36 mW @ −4.5 V
45 mW @ −2.5 V
68 mW @ −1.8 V
90 mW @ −1.5 V
300 mW @ −1.2 V
ID MAX
−6.2 A
−5.5 A
−3.0 A
−1.0 A
−0.2 A
S
G
S
Pin 1
D
P−CHANNEL MOSFET
D
WDFN6
CASE 506AP
MARKING
DIAGRAM
1
2
J6MG
6
5
3G 4
J6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
D2
G3
D
S
6D
5D
4S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 0
1
Publication Order Number:
NTLJS1102P/D
1 page  
NTLJS1102P
TYPICAL CHARACTERISTICS
2400
www22.D0a0taSChiseset4U.com
2000
1800
VGS = 0 V
TJ = 25°C
f = 1 MHz
1600
1400
1200 Coss
1000
800
600
400 Crss
200
0
01 2 3 45 6 7
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
8
1000
100
VGS = −4.5 V
VDD = −4 V
ID = −6.2 A
td(off)
tf
tr
10 td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.8
0.7 ID = −250 mA
0.6
0.5
0.4
0.3
0.2
0.1
0
−50 −25 0 25 50 75 100 125 150
TJ, TEMPERATURE (°C)
Figure 11. Threshold Voltage
5
4
−VDS
3
QT
−VGS
5
4
3
2 QGS
QGD
1
VDS = −4 V
ID = −6.2 A
TJ = 25°C
2
1
00
0 2 4 6 8 10 12 14 16
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
1
TJ = 125°C
TJ = 150°C
0.1
0.2 0.3 0.4
TJ = 25°C
TJ = −55°C
0.5 0.6 0.7
0.8
0.9 1.0
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
50
40
30
20
10
0
1E−03 1E−02 1E−01 1E+00 1E+01 1E+02 1E+03
SINGLE PULSE TIME (s)
Figure 12. Single Pulse Maximum Power
Dissipation
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| PDF Descargar | [ Datasheet NTLJS1102P.PDF ] | |
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