DataSheet26.com

SBG1035 PDF даташит

Спецификация SBG1035 изготовлена ​​​​«Sirectifier Semiconductors» и имеет функцию, называемую «(SBG1030 - SBG1045) Low VF Schottky Barrier Rectifiers».

Детали детали

Номер произв SBG1035
Описание (SBG1030 - SBG1045) Low VF Schottky Barrier Rectifiers
Производители Sirectifier Semiconductors
логотип Sirectifier Semiconductors логотип 

2 Pages
scroll

No Preview Available !

SBG1035 Даташит, Описание, Даташиты
SBG1030 thru SBG1045
www.DataSheet4U.com
Low VF Schottky Barrier Rectifiers
C(TAB)
AC
A
C
A=Anode, C=Cathode, TAB=Cathode
SBG1030
SBG1035
SBG1040
SBG1045
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
VDC
V
30
35
40
45
Dimensions TO-263(D2PAK)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06
2.03
4.83
2.79
0.51
1.14
0.99
1.40
0.46
1.14
0.74
1.40
8.64
8.00
9.65
8.89
9.65 10.29
6.22 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.315 .350
.380 .405
.245 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .008
.018 .029
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=95oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
VF Maximum Forward Voltage At 5A DC (Note 1)
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25oC
@TJ=100oC
CJ
ROJC
TJ
TSTG
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
Maximum Ratings
10
250
0.60
1.0
50
280
3.0
-55 to +125
-55 to +150
Unit
A
A
V
mA
pF
oC/W
oC
oC
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: D2PAK molded plastic
* Polarity: As marked on the body
* Weight: 0.06 ounces, 1.7 grams









No Preview Available !

SBG1035 Даташит, Описание, Даташиты
SBG1030 thru SBG1045
www.DataSheet4U.com
Low VF Schottky Barrier Rectifiers










Скачать PDF:

[ SBG1035.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
SBG1030(SBG1030 - SBG1045) Low VF Schottky Barrier RectifiersSirectifier Semiconductors
Sirectifier Semiconductors
SBG1030CT10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERDiodes Incorporated
Diodes Incorporated
SBG1030L10A SCHOTTKY BARRIER RECTIFIERDiodes Incorporated
Diodes Incorporated
SBG1030L-T10A SCHOTTKY BARRIER RECTIFIERDiodes Incorporated
Diodes Incorporated

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск