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S3CI9E0x01 PDF даташит

Спецификация S3CI9E0x01 изготовлена ​​​​«Samsung Semiconductor» и имеет функцию, называемую «CMOS Microcontroller».

Детали детали

Номер произв S3CI9E0x01
Описание CMOS Microcontroller
Производители Samsung Semiconductor
логотип Samsung Semiconductor логотип 

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S3CI9E0x01 Даташит, Описание, Даташиты
S3CI9E0X01 FLASH INTERFACE DEVICE
www.DataSheet4U.com
S3CI9E0X01 SPECIFICATION
Version : Ver. 1.0
Date : Jul. 16. 2003
Samsung Electronics Co., LTD
Semiconductor Flash Memory Product Planning & Applications
SAMSUNG ELECTRONICS
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S3CI9E0x01 Даташит, Описание, Даташиты
S3CI9E0X01 FLASH INTERFACE DEVICE
www.DaRtaSehveiest4iUo.cnomHistory
Revision
No.
0.0
Initial Draft
History
0.1 1.On page 18, BSC is moved from bufferRAM Write
Protection command register to system configuration
register and bufferRAM Write Protection command
register is removed.
2. Host Interface & NAND Flash Interface (page 3)
: 1.8V --> 1.8V / 2.5V / 3.0V
0.2 1. Package information is added.
2. Some description is updated.
3. Controller ID register default value is modified.
(Page 14)
4. Write Protection NAND Flash commands are
changed, and description are updated.(Page 23, 56)
0.3 1. Package pin configuration is changed.(page9)
2. Software algorithm of detecting NAND Flash type is
added. (page 18, 58)
- CE2Ena : 11 bit of system configuration register is
changed from ‘reserved’ to ‘CE2Ena’.
0.4 1. Minimum latency at sync. Read is changed from
2clocks to 3clocks
2. Technical notes are added
- Write Protection truth table is updated(page 58)
- Write Protection guidance is updated(page 58)
- Internal register reset case is updated(page 61)
- Pin connection guidance between Host and Eagle
(page 61)
- Asynchronous Page Read guidance (page 62)
3. DC/AC parameter is updated(page64~66)
: 1st release parameter
4. tASC parameter is removed.
tAES parameter is added
Draft
Date
Jan. 24th
2002
Jan. 25th
2002
Remark
Preliminary
Preliminary
Mar. 13th
2002
Preliminary
Apr. 15th
2002
Preliminary
Jun. 21th
2002
Preliminary
SAMSUNG ELECTRONICS
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S3CI9E0x01 Даташит, Описание, Даташиты
S3CI9E0X01 FLASH INTERFACE DEVICE
www.DataSheet4U.com 4. Package dimension information is updated
(page63~64)
5. Some descriptions are modified & added
0.5 1. Vcc is available on 1.8V and 2.5V part.
2. Pin J2 is changed from NC to DNU.
3. Fig30(State diagram of NAND Flash Write
Protection) is updated.(page 57 )
4. Internal Register reset case table is updated
(page 63)
5. DC parameter is updated for 2.5V part (page 66~67)
6. Erratas and walk-around methods added
(page 73~76)
7. Default value of Interrupt Status Register(1442h) is
changed from 0000h to 8000h, which is not the
silicon revision but definition change.(refer to Internal
Regitster reset case table) (page 22)
9. Controller ID register value is updated from 1002h to
1202h (page 15)
10. AC parameters are updated (page 65~66)
tCES, tIACC are added in Sync. Read.
tVLWL is removed in Async. Write.
tAVA is removed.
tCS is added in Async. Write.
1.0 Spec. is finalized
Dec. 11th
2002
Preliminary
Jul. 16th
2003
SAMSUNG ELECTRONICS
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Номер в каталогеОписаниеПроизводители
S3CI9E0x01CMOS MicrocontrollerSamsung Semiconductor
Samsung Semiconductor

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