GS88418B Datasheet PDF - GSI Technology
| Part Number | GS88418B | |
| Description | S/DCD Sync Burst SRAMs | |
| Manufacturers | GSI Technology | |
| Logo |  |
|
|
There is a preview and GS88418B download ( pdf file ) link at the bottom of this page. Total 25 Pages | ||
Preview 1 page No Preview Available !
Preliminary
GS88418/36B-200/180/166/150/133
1w1w9w-.DBautamShpeet4BUG.coAm
Commercial Temp
Industrial Temp
512K x 18, 256K x 36
200 MHz–133 MHz
8Mb S/DCD Sync Burst SRAMs
3.3 V VDD
3.3 V and 2.5 V I/O
Features
• FT pin for user-configurable flow through or pipelined
operation
• Single/Dual Cycle Deselect Selectable
• ZQ mode pin for user-selectable high/low output drive strength
• 3.3 V +10%/–5% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to SCD x18/x36 Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Common data inputs and data outputs
• Clock Control, registered, address, data, and control
• Internal self-timed write cycle
• Automatic power-down for portable applications
• 119-bump BGA package
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
tCycle
tKQ
IDD
tKQ
tCycle
IDD
-200 -180 -166 -150 -133 Unit
5.0 5. 5 6.0 6.7 7.5 ns
3.0 3.2 3.5 3.8 4.0 ns
450 410 380 350 340 mA
7.5 8 8.5 9.0 9.5 ns
10 10 10 10 10 ns
270 270 250 240 220 mA
Functional Description
Applications
The GS88418/36B is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter.
Although of a type originally developed for Level 2 Cache
applications supporting high performance CPUs, the device
now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enables (E1, in x18 version, E1 and
E2 in x36 version), address burst control inputs (ADSP,
ADSC, ADV), and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive-edge-triggered
clock input (CK). Output enable (G) and power-down control
(ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order
(LBO) input. The Burst function need not be used. New
addresses can be loaded on every cycle with no degradation of
chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by
the user via the FT mode bump (Bump 5R). Holding the FT
mode pin low places the RAM in Flow Through mode, causing
output data to bypass the Data Output Register. Holding FT
high places the RAM in Pipeline mode, activating the rising-
edge-triggered Data Output Register.
SCD and DCD Pipelined Reads
The GS88436B is a SCD (Single Cycle Deselect) and DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one
stage less than read commands. SCD RAMs begin turning off
their outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the
SCD mode input on Bump 4L.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write
control inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ
low) for multi-drop bus applications and normal drive strength
(ZQ floating or high) point-to-point applications. See the
Output Driver Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK).
Memory data is retained during Sleep mode.
Core and Interface Voltages
The GS884B operates on a 3.3 V power supply and all inputs/
outputs are 3.3 V- and 2.5 V-compatible. Separate output
power (VDDQ) pins are used to decouple output noise from the
internal circuit.
Rev: 1.05 10/2001
1/25 © 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
|
| |
 
www.DataSheet4U.com
GS88418/36 Block Diagram
A0–An
Register
DQ
A0
A1
LBO
ADV
CK
ADSC
ADSP
GW
BW
BA
BB
BC
BD
D0 Q0
D1 Q1
Counter
Load
A0
A1
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
DQ
Register
E1 D Q
FT
G
Power Down
ZZ
Control
Note: Only x18 version shown for simplicity.
Register
DQ
DCD=0
SCD=1
Preliminary
GS88418/36B-200/180/166/150/133
A
Memory
Array
QD
18
4
18
DQx0–DQx9
Rev: 1.05 10/2001 5/25 © 2000, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GS88418B electronic component. |
| Information | Total 25 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GS88418B.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| GS88418B | The function is S/DCD Sync Burst SRAMs. GSI Technology | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
GS88
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||