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PDF HN7G02FE Data sheet ( Hoja de datos )
| Número de pieza | HN7G02FE | |
| Descripción | Power Management Switch Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Multichip Discrete Device
HN7G02FE
HN7G02FE
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
Unit: mm
Q1 (transistor): RN2110 equivalent
Q2 (MOSFET): SSM3K03FE equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
−50
−50
−5
−100
Unit
V
V
V
mA
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
1. EMITTER
2. BASE
3. DRAIN
4. SOURCE
5. GATE
6. COLLECTOR
Characteristic
Drain-source voltage
Gate-source voltage
DC drain current
Symbol
VDS
VGSS
ID
Q1, Q2 Common Ratings (Ta = 25°C)
Rating
20
10
50
Unit
V
V
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2N1F
Weight:0.003g (typ.)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P (Note 1)
Tj
Tstg
100
150
−55~150
mW
°C
°C
Note:
Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Total rating
Marking
Equivalent Circuit (top view)
654
FT
Q1 Q2
123
1
2007-11-01
1 page  
Q2 (MOSFET)
www.DataSheet4U.com
HN7G02FE
5 2007-11-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HN7G02FE.PDF ] | |
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