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PDF HN7G03FU Data sheet ( Hoja de datos )
| Número de pieza | HN7G03FU | |
| Descripción | Power Management Switch Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Multichip Discrete Device
HN7G03FU
Power Management Switch Applications
Driver Circuit Applications
Interface Circuit Applications
Q1 (transistor) : 2SA1955 equivalent
Q2 (S-MOS) : SSM3K04FU equivalent
HN7G03FU
Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
IB
Rating
−15
−12
−5
−400
−50
Q2 Absolute Maximum Ratings (Ta = 25°C)
Unit
US6
V
1.EMITTER
2.BASE
3.DRAIN
4.SOURCE
5.GATE
6.COLLECTOR
V JEDEC
―
V JEITA
―
mA TOSHIBA
2-2J1E
mA Weight: 6.8 mg (typ.)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDS
VGSS
ID
Rating
20
10
100
Unit
V
V
mA
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P* 200 mW
Tj 125 °C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating.
1 2007-11-01
1 page  
HN7G03FU
Q2
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5 2007-11-01
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HN7G03FU.PDF ] | |
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