HN7G04FU PDF даташит
Спецификация HN7G04FU изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «General-Purpose Amplifier Applications». |
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Детали детали
Номер произв | HN7G04FU |
Описание | General-Purpose Amplifier Applications |
Производители | Toshiba Semiconductor |
логотип |
6 Pages
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TOSHIBA Multichip Discrete Device
HN7G04FU
General-Purpose Amplifier Applications
Driver Circuit Applications
Switching and Muting Switch Applications
HN7G04FU
Unit: mm
Q1: 2SA1954 equivalent
Q2: RN1307 equivalent
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
IB
Rating
−15
−12
−5
−400
−50
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
50
50
6
100
Q1, Q2 Common Ratings (Ta = 25°C)
Unit
V
V
V
mA
mA
Unit
V
V
V
mA
1.EMITTER (E1)
2.BASE
(B1)
3.COLLECTOR (C2)
4.EMITTER (E2)
5.BASE
(B2)
6.COLLECTOR (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-2J1A
Weight: 0.0068 g (typ.)
Marking
Type Name
hFE Rank
9A
Characteristic
Symbol
Rating
Unit
Collector power dissipation
Junction temperature
PC (Note 1)
Tj
200
150
mW
°C
Equivalent Circuit
(top view)
Storage temperature range
Tstg
−55~150
°C
654
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
Q1
Q2
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
123
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating. 130 mW per element should not be exceeded.
1 2007-11-01
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Q1 Electrical Characteristics (Ta = 25°C)
www.DataSheet4UC.hcaormacteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = −15 V, IE = 0
Emitter cutoff current
IEBO
VEB = −5 V, IC = 0
DC current gain
hFE (Note) VCE = −2 V, IC = −10 mA
Collector-emitter saturation voltage
VCE (sat)(1)
VCE (sat)(2)
IC = −10 mA, IB = −0.5 mA
IC = −200 mA, IB = −10 mA
Base-emitter saturation voltage
VBE (sat) IC = −200 mA, IB = −10 mA
Transition frequency
fT VCE = −2 V, IC = −10 mA
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
(Note) hFE Classification A : 300~600, B : 500~1000
Q2 Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector output capacitance
Input resistor
Resistor ratio
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI(ON)
VI(OFF)
fT
Cob
R1
R1/R2
Test Condition
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
VEB = 6 V, IC = 0
VCE = 5 V, IC = 10 mA
IC = 5 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA
VCE = 5 V, IC = 0.1 mA
VCE = 10 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
⎯
⎯
HN7G04FU
Min Typ. Max Unit
⎯ ⎯ −100 nA
⎯ ⎯ −100 nA
300 ⎯ 1000
⎯ −15 −30
mV
⎯ −110 −250
⎯ −0.87 −1.2
V
⎯ 130 ⎯ MHz
⎯ 4.2 ⎯ pF
Min Typ. Max Unit
⎯
⎯
0.081
80
⎯
0.7
0.5
⎯
⎯
7
0.191
⎯
⎯
⎯
⎯
0.1
⎯
⎯
250
3
10
0.213
100
500
0.15
⎯
0.3
1.8
1.0
⎯
⎯
13
0.232
nA
nA
V
V
V
MHz
pF
kΩ
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Q1
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HN7G04FU
3 2007-11-01
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Номер в каталоге | Описание | Производители |
HN7G04FU | General-Purpose Amplifier Applications | Toshiba Semiconductor |
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