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PDF HN7G05FU Data sheet ( Hoja de datos )
| Número de pieza | HN7G05FU | |
| Descripción | Power Management Switch Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Multichip Discrete Device
HN7G05FU
Power Management Switch Applications, Inverter Circuit
Applications, Driver Circuit Applications and Interface
Circuit Applications
HN7G05FU
Unit: mm
Q1 (transistor): RN2301 equivalent
Q2 (MOSFET): 2SK1830 equivalent
Q1 (Transistor) Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
−50
−50
−10
−100
Unit
V
V
V
mA
Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDS
VGSS
ID
Rating
20
10
50
Unit
V
V
mA
JEDEC
―
JEITA
―
TOSHIBA
2-2J1E
Weight: 0.0068 g (typ.)
Marking
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P (Note 1)
Tj
Tstg
200
150
−55~150
mW
°C
°C
60
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Equivalent Circuit (top view)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
654
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Q1
Q2
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
123
Note 1: Total rating
1 2007-11-01
1 page  
Q1, Q2 common
www.DataSheet4U.com
400
P* – Ta
300
200
100
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (°C)
*:Total rating
175
HN7G05FU
5 2007-11-01
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HN7G05FU.PDF ] | |
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