(PDF) HN7G10FE Datasheet - Power Management Switch Applications

Número de pieza	HN7G10FE
Descripción	Power Management Switch Applications
Fabricantes	Toshiba Semiconductor
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No Preview Available ! www.DataSheet4U.com TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications HN7G10FE Unit: mm • Q1 (transistor): 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 15 12 5 400 50 Q2 (MOSFET) Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V V mA mA Unit V V mA 1. EMITTER 2. BASE 3. DRAIN 4. SOURCE 5. GATE 6. COLLECTOR JEDEC ― JEITA ― TOSHIBA 2-2J1A Weight: 0.003 g (typ.) Q1, Q2 Common Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Note 1: Total rating Symbol PC (Note 1) Tj Tstg Rating 100 150 −55~150 Unit mW °C °C Marking Type Name hFE Rank Pin Assignment (top view) 654 78A Q1 Q2 123 1 2005-03-29 1 page Q2 (S-MOS) www.DataSheet4U.com HN7G10FE 5 2005-03-29 5 Page

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PDF HN7G10FE Data sheet ( Hoja de datos )