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HGT1S3N60C3D PDF даташит

Спецификация HGT1S3N60C3D изготовлена ​​​​«Harris Corporation» и имеет функцию, называемую «UFS Series N-Channel IGBT».

Детали детали

Номер произв HGT1S3N60C3D
Описание UFS Series N-Channel IGBT
Производители Harris Corporation
логотип Harris Corporation логотип 

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HGT1S3N60C3D Даташит, Описание, Даташиты
HGTP3N60C3D, HGT1S3N60C3D,
SEMICONDUCTOR
HGT1S3N60C3DS
www.DataSheet4U.com
January 1997
6A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC TO-220AB
COLLECTOR (FLANGE)
EMITTER
COLLECTOR
GATE
Description
The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
are MOS gated high voltage switching devices combining the
best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and the
low on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25oC and 150oC. The IGBT used is the development type
TA49113. The diode used in anti-parallel with the IGBT is the
development type TA49055.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
PACKAGING AVAILABILITY
JEDEC TO-262AA
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
GATE
JEDEC TO-263AB
GATE
EMITTER
MA
COLLECTOR
(FLANGE)
PART NUMBER
HGTP3N60C3D
HGT1S3N60C3D
HGT1S3N60C3DS
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
G3N60C3D
G3N60C3D
G3N60C3D
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. HGT1S3N60C3DS9A.
G
Formerly Developmental Type TA49119.
E
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At
At
TC
TC
=
=
25oC .
110oC
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. IC25
IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . .
Switching Safe Operating Area at TJ = 150oC, Fig. 14.
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VGEM
SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 10V, Fig 6 . . . . . . . . . . . . . . . . . . . . .tSC
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 82.
HGTP3N60C3D, HGT1S3N60C3D
HGT1S3N60C3DS
600
6
3
24
±20
±30
18A at 480V
33
0.27
-40 to 150
260
8
UNITS
V
A
A
A
V
V
W
W/ oC
oC
oC
µs
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
3-9
File Number 4140.1









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HGT1S3N60C3D Даташит, Описание, Даташиты
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified
www.DataSheetP4AUR.cAoMmETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
SYMBOL
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
VCE = BVCES
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA,
VCE = VGE
TC = 25oC
VGE = ±25V
TJ = 150oC
RG = 82
VGE = 15V
L = 1mH
VCE(PK) = 480V
VCE(PK) = 600V
MIN
600
-
-
-
-
3.0
-
18
2
TYP MAX UNITS
--V
- 250 µA
- 2.0 mA
1.65 2.0
V
1.85 2.2
V
5.5 6.0
V
-
±250
nA
--A
--A
Gate-Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
tFI
EON
EOFF
VEC
tRR
RθJC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
TJ = 150oC
ICE = IC110
VCE(PK) = 0.8 BVCES
VGE = 15V
RG = 82
L = 1mH
IEC = 3A
IEC = 3A, dIEC/dt = 200A/µs
IEC = 1A, dIEC/dt = 200A/µs
IGBT
Diode
- 8.3 -
V
-
10.8 13.5
nC
-
13.8 17.3
nC
- 5 - ns
- 10 -
ns
- 325 400 ns
- 130 275 ns
- 85 -
µJ
- 245 -
µJ
- 2.0 2.5 V
- 22 28 ns
- 17 22 ns
- - 3.75 oC/W
- - 3.0 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS
were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces
the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,567,641
4,587,713
4,598,461
4,605,948
4,618,872
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
3-10









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HGT1S3N60C3D Даташит, Описание, Даташиты
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
Typical Performance Curves
www.D2a0taSheet4U.com
DUTY CYCLE <0.5%, VCE = 10V
18 PULSE DURATION = 250µs
16
14
12
10
8 TC = 150oC
6 TC = 25oC
4 TC = -40oC
2
0
4 6 8 10 12
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
14
20
PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%
16 TC = 25oC
12V
14
12
10 VGE = 15V
8
10V
9.0V
6 8.5V
4 8.0V
2 7.5V
7.0V
0
0 2 4 6 8 10
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2. SATURATION CHARACTERISTICS
20 PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 10V
16
14
12
10 TC = -40oC
8
6 TC = 150oC
4 TC = 25oC
2
0
0 1 2 3 45
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE
20 PULSE DURATION = 250µs
18 DUTY CYCLE <0.5%, VGE = 15V
16
14 TC = 25oC
12
10
8 TC = -40oC
6
4
TC = 150oC
2
0
01 2 34
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE
7
VGE = 15V
6
5
4
3
2
1
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
14 VCE = 360V, RGE = 82, TJ = 125oC
12
70
60
10
tSC
8
6
50
40
ISC
30
4 20
2 10
00
10 11 12 13 14 15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-11










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Номер в каталогеОписаниеПроизводители
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