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SBCT1050 PDF даташит

Спецификация SBCT1050 изготовлена ​​​​«Diotec Semiconductor» и имеет функцию, называемую «(SBCT1020 - SBCT10100) Schottky Barrier Rectifiers».

Детали детали

Номер произв SBCT1050
Описание (SBCT1020 - SBCT10100) Schottky Barrier Rectifiers
Производители Diotec Semiconductor
логотип Diotec Semiconductor логотип 

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SBCT1050 Даташит, Описание, Даташиты
SBCT1020 ... SBCT10100
www.DataSheet4U.com
SBCT1020 ... SBCT10100
Schottky Barrier Rectifiers – Common Cathode
Schottky-Barrier-Gleichrichter – Gemeinsame Kathode
Version 2007-01-17
10±0.2
Nominal Current
Nennstrom
4 3.8
4 Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Type
Typ
123
1.5 1 2 3
0.9
2.54
Dimensions - Maße [mm]
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
10 A
20...100 V
TO-220AB
2.2g
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
SBCT1020
SBCT1030
SBCT1040
SBCT1045
SBCT1050
SBCT1060
SBCT1090
SBCT10100
20
30
40
45
50
60
90
100
Grenz- und Kennwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
20
Forward Voltage
Durchlass-Spannung
VF [V] 1) 2)
IF = 5 A IF = 10 A
< 0.55
< 0.63
30
< 0.55
< 0.63
40
< 0.55
< 0.63
45
< 0.55
< 0.63
50
< 0.70
< 0.79
60
< 0.70
< 0.79
90
< 0.85
< 0.92
100
< 0.85
< 0.92
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
Peak forward surge current, 50/60 Hz half sine-wave SBCT1020... TA = 25°C
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SBCT1060
Peak forward surge current, 50/60 Hz half sine-wave SBCT1080... TA = 25°C
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
SBCT10100
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
IFAV
IFAV
IFRM
IFSM
IFSM
i2t
5 A 2)
10 A 3)
20 A 2)
100/120 A 2)
100/120 A 2)
50 A2s 2)
-50...+150°C
-50...+175°C
1 Tj = 25°C
2 Per diode Pro Diode
3 Per device (parallel operation) Pro Bauteil (Parallelbetrieb)
© Diotec Semiconductor AG
http://www.diotec.com/
1









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SBCT1050 Даташит, Описание, Даташиты
Characteristics
www.DataSheet4U.com
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht - Gehäuse
Tj = 25°C
Tj = 100°C
VR = VRRM
SBCT1020 ... SBCT10100
Kennwerte
IR < 300 µA
< 7 mA
RthC < 3.0 K/W 1)
120
[%]
100
80
60
40
20
IFAV
0
0 TA 50 100 150 [°C]
Rated forward current versus ambient temperature1)
Zul. Richtstrom in Abh. von der Umgebungstemp.1)
102
[A]
SBCT1020...SBCT1045
10
SBCT1050, SBCT1060
1
SBCT1080, SBCT10100
10-1
IF
10-2
0 VF 0.4 0.6 [V] 1.0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1 Per device (parallel operation) Pro Bauteil (Parallelbetrieb)
2 http://www.diotec.com/
© Diotec Semiconductor AG










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Номер в каталогеОписаниеПроизводители
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